Crystalline perfection of Hg1-xCdxTe epilayers by the vertical dipping liquid-phase epitaxy

Jiqian Zu; Junhao Chu; Biao Li; Xinqiang Chen; Juying Cao; Jijian Cheng

doi:10.1016/s0022-0248(96)00801-9

Crystalline perfection of Hg_1-xCd_xTe epilayers by the vertical dipping liquid-phase epitaxy

Jiqian Zu^*
, Junhao Chu
, Biao Li
, Xinqiang Chen
, Juying Cao
, Jijian Cheng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The crystalline perfection of bulk Hg_1-xCd_xTe layers grown by the vertical dipping LPE on CdZnTe substrates has been studied from the X-ray double crystal rocking curve (DCRC) and scanning electron microscopy (SEM) techniques. The structural quality of Hg_1-xCd_xTe bulk epilayers is better than that of the interface between the substrate and epilayer. The full width at half maximum (FWHM) of DCRCs was measured on a two-dimensional array of points over epilayer surface. Therefore the map of the structural uniformity of Hg_1-xCd_xTe epilayers can be obtained in this way. The structural uniformity of the bulk Hg_1-xCd_xTe epilayers is also observed in the growth direction. The dislocation density map of Hg^1-xCd_xTe bulk epilayer is calculated using the map of the FWHM values.

Original language	English
Pages (from-to)	61-66
Number of pages	6
Journal	Journal of Crystal Growth
Volume	177
Issue number	1-2
DOIs	https://doi.org/10.1016/s0022-0248(96)00801-9
State	Published - May 1997
Externally published	Yes

Keywords

HgCdTe
Liquid phase epitaxy
Structural quality

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10.1016/s0022-0248(96)00801-9

Cite this

@article{d76f111962f94eae9fdccc6cc786397a,

title = "Crystalline perfection of Hg1-xCdxTe epilayers by the vertical dipping liquid-phase epitaxy",

abstract = "The crystalline perfection of bulk Hg1-xCdxTe layers grown by the vertical dipping LPE on CdZnTe substrates has been studied from the X-ray double crystal rocking curve (DCRC) and scanning electron microscopy (SEM) techniques. The structural quality of Hg1-xCdxTe bulk epilayers is better than that of the interface between the substrate and epilayer. The full width at half maximum (FWHM) of DCRCs was measured on a two-dimensional array of points over epilayer surface. Therefore the map of the structural uniformity of Hg1-xCdxTe epilayers can be obtained in this way. The structural uniformity of the bulk Hg1-xCdxTe epilayers is also observed in the growth direction. The dislocation density map of Hg1-xCdxTe bulk epilayer is calculated using the map of the FWHM values.",

keywords = "HgCdTe, Liquid phase epitaxy, Structural quality",

author = "Jiqian Zu and Junhao Chu and Biao Li and Xinqiang Chen and Juying Cao and Jijian Cheng",

year = "1997",

month = may,

doi = "10.1016/s0022-0248(96)00801-9",

language = "英语",

volume = "177",

pages = "61--66",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Crystalline perfection of Hg1-xCdxTe epilayers by the vertical dipping liquid-phase epitaxy

AU - Zu, Jiqian

AU - Chu, Junhao

AU - Li, Biao

AU - Chen, Xinqiang

AU - Cao, Juying

AU - Cheng, Jijian

PY - 1997/5

Y1 - 1997/5

N2 - The crystalline perfection of bulk Hg1-xCdxTe layers grown by the vertical dipping LPE on CdZnTe substrates has been studied from the X-ray double crystal rocking curve (DCRC) and scanning electron microscopy (SEM) techniques. The structural quality of Hg1-xCdxTe bulk epilayers is better than that of the interface between the substrate and epilayer. The full width at half maximum (FWHM) of DCRCs was measured on a two-dimensional array of points over epilayer surface. Therefore the map of the structural uniformity of Hg1-xCdxTe epilayers can be obtained in this way. The structural uniformity of the bulk Hg1-xCdxTe epilayers is also observed in the growth direction. The dislocation density map of Hg1-xCdxTe bulk epilayer is calculated using the map of the FWHM values.

AB - The crystalline perfection of bulk Hg1-xCdxTe layers grown by the vertical dipping LPE on CdZnTe substrates has been studied from the X-ray double crystal rocking curve (DCRC) and scanning electron microscopy (SEM) techniques. The structural quality of Hg1-xCdxTe bulk epilayers is better than that of the interface between the substrate and epilayer. The full width at half maximum (FWHM) of DCRCs was measured on a two-dimensional array of points over epilayer surface. Therefore the map of the structural uniformity of Hg1-xCdxTe epilayers can be obtained in this way. The structural uniformity of the bulk Hg1-xCdxTe epilayers is also observed in the growth direction. The dislocation density map of Hg1-xCdxTe bulk epilayer is calculated using the map of the FWHM values.

KW - HgCdTe

KW - Liquid phase epitaxy

KW - Structural quality

UR - https://www.scopus.com/pages/publications/0040569036

U2 - 10.1016/s0022-0248(96)00801-9

DO - 10.1016/s0022-0248(96)00801-9

M3 - 文章

AN - SCOPUS:0040569036

SN - 0022-0248

VL - 177

SP - 61

EP - 66

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-2

ER -

Crystalline perfection of Hg_1-xCd_xTe epilayers by the vertical dipping liquid-phase epitaxy

Abstract

Keywords

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