Critical anodization temperature for optical transition of porous silicon

Li Kun Pan; Hai Bo Li; Zhuo Sun; Chang Qing Sun

Critical anodization temperature for optical transition of porous silicon

Li Kun Pan^*
, Hai Bo Li
, Zhuo Sun
, Chang Qing Sun

^*Corresponding author for this work

East China Normal University
Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

Abstract

The porous silicon (PS) samples were prepared at different anodization temperature. Photoluminescence, photo-absorbance, and X-ray photoelectron spectroscopies were used to study the structural and optical behavior of the PS. The results showed that an optical transition of porous silicon from red shift to blue shift, and Si-2p binding energy transition from low to high ata critical anodization temperature, 343 K.

Original language	English
Pages (from-to)	165-168
Number of pages	4
Journal	Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices
Volume	15
Issue number	2
State	Published - Apr 2009
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Anodization
Optical behavior
Porous silicon

Cite this

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title = "Critical anodization temperature for optical transition of porous silicon",

abstract = "The porous silicon (PS) samples were prepared at different anodization temperature. Photoluminescence, photo-absorbance, and X-ray photoelectron spectroscopies were used to study the structural and optical behavior of the PS. The results showed that an optical transition of porous silicon from red shift to blue shift, and Si-2p binding energy transition from low to high ata critical anodization temperature, 343 K.",

keywords = "Anodization, Optical behavior, Porous silicon",

author = "Pan, \{Li Kun\} and Li, \{Hai Bo\} and Zhuo Sun and Sun, \{Chang Qing\}",

year = "2009",

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language = "英语",

volume = "15",

pages = "165--168",

journal = "Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices",

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publisher = "Chinese Academy of Sciences",

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TY - JOUR

T1 - Critical anodization temperature for optical transition of porous silicon

AU - Pan, Li Kun

AU - Li, Hai Bo

AU - Sun, Zhuo

AU - Sun, Chang Qing

PY - 2009/4

Y1 - 2009/4

N2 - The porous silicon (PS) samples were prepared at different anodization temperature. Photoluminescence, photo-absorbance, and X-ray photoelectron spectroscopies were used to study the structural and optical behavior of the PS. The results showed that an optical transition of porous silicon from red shift to blue shift, and Si-2p binding energy transition from low to high ata critical anodization temperature, 343 K.

AB - The porous silicon (PS) samples were prepared at different anodization temperature. Photoluminescence, photo-absorbance, and X-ray photoelectron spectroscopies were used to study the structural and optical behavior of the PS. The results showed that an optical transition of porous silicon from red shift to blue shift, and Si-2p binding energy transition from low to high ata critical anodization temperature, 343 K.

KW - Anodization

KW - Optical behavior

KW - Porous silicon

UR - https://www.scopus.com/pages/publications/84862093286

M3 - 文章

AN - SCOPUS:84862093286

SN - 1007-4252

VL - 15

SP - 165

EP - 168

JO - Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices

JF - Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices

IS - 2

ER -

Critical anodization temperature for optical transition of porous silicon

Abstract

UN SDGs

Keywords

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