Abstract
The porous silicon (PS) samples were prepared at different anodization temperature. Photoluminescence, photo-absorbance, and X-ray photoelectron spectroscopies were used to study the structural and optical behavior of the PS. The results showed that an optical transition of porous silicon from red shift to blue shift, and Si-2p binding energy transition from low to high ata critical anodization temperature, 343 K.
| Original language | English |
|---|---|
| Pages (from-to) | 165-168 |
| Number of pages | 4 |
| Journal | Gongneng Cailiao yu Qijian Xuebao/Journal of Functional Materials and Devices |
| Volume | 15 |
| Issue number | 2 |
| State | Published - Apr 2009 |
Keywords
- Anodization
- Optical behavior
- Porous silicon
