Creating excitons in II-VI quantum wells with large binding energies

B. Urbaszek; C. Morhain; C. Bradford; C. B. O'Donnell; S. A. Telfer; X. Tang; A. Balocchi; K. A. Prior; B. C. Cavenett; C. M. Townsley; R. J. Nicholas

doi:10.1109/COMMAD.2000.1022894

Creating excitons in II-VI quantum wells with large binding energies

B. Urbaszek
, C. Morhain
, C. Bradford
, C. B. O'Donnell
, S. A. Telfer
, X. Tang
, A. Balocchi
, K. A. Prior
, B. C. Cavenett
, C. M. Townsley
, R. J. Nicholas

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The wide bandgap II-VI semiconductors have unique properties which' allow the possibility of suppressing the exciton-phonon scattering up to room temperature in quantum well structures designed so that the exciton excitation E_15→2s > hv_LO. High quality ZnSe quantum wells in MgS and ZnS quantum wells in ZnMgS have been grown by MBE and these have excellent optical properties. Magnetic field and linewidth temperature dependent measurements have been used to determine the exciton binding energies and to investigate the exciton-LO phonon scattering processes. The results show the possibility of suppressing exciton-LO phonon scattering in these structures.

Original language	English
Title of host publication	COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices
Editors	Leonard D. Broekman, Brian F. Usher, John D. Riley
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	73-80
Number of pages	8
ISBN (Electronic)	0780366980
DOIs	https://doi.org/10.1109/COMMAD.2000.1022894
State	Published - 2000
Externally published	Yes
Event	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 - Bundoora, Australia Duration: 6 Dec 2000 → 8 Dec 2000

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
Volume	2000-January

Conference

Conference	Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000
Country/Territory	Australia
City	Bundoora
Period	6/12/00 → 8/12/00

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10.1109/COMMAD.2000.1022894

Cite this

Urbaszek, B., Morhain, C., Bradford, C., O'Donnell, C. B., Telfer, S. A., Tang, X., Balocchi, A., Prior, K. A., Cavenett, B. C., Townsley, C. M., & Nicholas, R. J. (2000). Creating excitons in II-VI quantum wells with large binding energies. In L. D. Broekman, B. F. Usher, & J. D. Riley (Eds.), COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices (pp. 73-80). Article 1022894 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2000-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2000.1022894

Urbaszek, B. ; Morhain, C. ; Bradford, C. et al. / Creating excitons in II-VI quantum wells with large binding energies. COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. editor / Leonard D. Broekman ; Brian F. Usher ; John D. Riley. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 73-80 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

@inproceedings{05ee03d413e34af8a1cde99c1317f540,

title = "Creating excitons in II-VI quantum wells with large binding energies",

abstract = "The wide bandgap II-VI semiconductors have unique properties which' allow the possibility of suppressing the exciton-phonon scattering up to room temperature in quantum well structures designed so that the exciton excitation E15→2s > hvLO. High quality ZnSe quantum wells in MgS and ZnS quantum wells in ZnMgS have been grown by MBE and these have excellent optical properties. Magnetic field and linewidth temperature dependent measurements have been used to determine the exciton binding energies and to investigate the exciton-LO phonon scattering processes. The results show the possibility of suppressing exciton-LO phonon scattering in these structures.",

author = "B. Urbaszek and C. Morhain and C. Bradford and O'Donnell, \{C. B.\} and Telfer, \{S. A.\} and X. Tang and A. Balocchi and Prior, \{K. A.\} and Cavenett, \{B. C.\} and Townsley, \{C. M.\} and Nicholas, \{R. J.\}",

note = "Publisher Copyright: {\textcopyright} 2000 IEEE.; Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000 ; Conference date: 06-12-2000 Through 08-12-2000",

year = "2000",

doi = "10.1109/COMMAD.2000.1022894",

language = "英语",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "73--80",

editor = "Broekman, \{Leonard D.\} and Usher, \{Brian F.\} and Riley, \{John D.\}",

booktitle = "COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices",

address = "美国",

}

Urbaszek, B, Morhain, C, Bradford, C, O'Donnell, CB, Telfer, SA, Tang, X, Balocchi, A, Prior, KA, Cavenett, BC, Townsley, CM & Nicholas, RJ 2000, Creating excitons in II-VI quantum wells with large binding energies. in LD Broekman, BF Usher & JD Riley (eds), COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices., 1022894, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, vol. 2000-January, Institute of Electrical and Electronics Engineers Inc., pp. 73-80, Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000, Bundoora, Australia, 6/12/00. https://doi.org/10.1109/COMMAD.2000.1022894

Creating excitons in II-VI quantum wells with large binding energies. / Urbaszek, B.; Morhain, C.; Bradford, C. et al.
COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. ed. / Leonard D. Broekman; Brian F. Usher; John D. Riley. Institute of Electrical and Electronics Engineers Inc., 2000. p. 73-80 1022894 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD; Vol. 2000-January).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Creating excitons in II-VI quantum wells with large binding energies

AU - Urbaszek, B.

AU - Morhain, C.

AU - Bradford, C.

AU - O'Donnell, C. B.

AU - Telfer, S. A.

AU - Tang, X.

AU - Balocchi, A.

AU - Prior, K. A.

AU - Cavenett, B. C.

AU - Townsley, C. M.

AU - Nicholas, R. J.

PY - 2000

Y1 - 2000

N2 - The wide bandgap II-VI semiconductors have unique properties which' allow the possibility of suppressing the exciton-phonon scattering up to room temperature in quantum well structures designed so that the exciton excitation E15→2s > hvLO. High quality ZnSe quantum wells in MgS and ZnS quantum wells in ZnMgS have been grown by MBE and these have excellent optical properties. Magnetic field and linewidth temperature dependent measurements have been used to determine the exciton binding energies and to investigate the exciton-LO phonon scattering processes. The results show the possibility of suppressing exciton-LO phonon scattering in these structures.

AB - The wide bandgap II-VI semiconductors have unique properties which' allow the possibility of suppressing the exciton-phonon scattering up to room temperature in quantum well structures designed so that the exciton excitation E15→2s > hvLO. High quality ZnSe quantum wells in MgS and ZnS quantum wells in ZnMgS have been grown by MBE and these have excellent optical properties. Magnetic field and linewidth temperature dependent measurements have been used to determine the exciton binding energies and to investigate the exciton-LO phonon scattering processes. The results show the possibility of suppressing exciton-LO phonon scattering in these structures.

UR - https://www.scopus.com/pages/publications/84949757444

U2 - 10.1109/COMMAD.2000.1022894

DO - 10.1109/COMMAD.2000.1022894

M3 - 会议稿件

AN - SCOPUS:84949757444

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 73

EP - 80

BT - COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices

A2 - Broekman, Leonard D.

A2 - Usher, Brian F.

A2 - Riley, John D.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2000

Y2 - 6 December 2000 through 8 December 2000

ER -

Urbaszek B, Morhain C, Bradford C, O'Donnell CB, Telfer SA, Tang X et al. Creating excitons in II-VI quantum wells with large binding energies. In Broekman LD, Usher BF, Riley JD, editors, COMMAD 2000 Proceedings - Conference on Optoelectronic and Microelectronic Materials and Devices. Institute of Electrical and Electronics Engineers Inc. 2000. p. 73-80. 1022894. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2000.1022894

Creating excitons in II-VI quantum wells with large binding energies

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