Corrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69](S0026271415302535)(10.1016/j.microrel.2015.12.007)

Weiliang Wang; Karim Khan; Xingye Zhang; Haiming Qin; Jun Jiang; Lijing Miao; Kemin Jiang; Pengjun Wang; Mingzhi Dai; Junhao Chu

doi:10.1016/j.microrel.2016.09.003

Corrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69](S0026271415302535)(10.1016/j.microrel.2015.12.007)

Weiliang Wang, Karim Khan, Xingye Zhang, Haiming Qin, Jun Jiang, Lijing Miao, Kemin Jiang, Pengjun Wang, Mingzhi Dai, Junhao Chu

School of Physics and Electronic Science

Research output: Contribution to journal › Comment/debate

1 Scopus citations

Abstract

The authors wish to update < Authors of article: Weiliang Wang^a,b, Karim Khan^b, Xingye Zhang^c, Haiming Qin^b, Jun Jiang^b, Lijing Miao^b, Kemin Jiang^b, Pengjun Wang^a⁎, Mingzhi Dai^b⁎, Junhao Chu^d⁎ (^⁎ Means corresponding authors.) Affiliations of authors: a. Institute of Circuits and Systems, Ningbo University, Ningbo 315211, China b. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China c. Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China d. Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, 500 Dong-chuan Road, Shanghai 200241, China >. The authors would like to apologise for any inconvenience caused.

Original language	English
Pages (from-to)	159
Number of pages	1
Journal	Microelectronics Reliability
Volume	67
DOIs	https://doi.org/10.1016/j.microrel.2016.09.003
State	Published - 1 Dec 2016

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Wang, W., Khan, K., Zhang, X., Qin, H., Jiang, J., Miao, L., Jiang, K., Wang, P., Dai, M., & Chu, J. (2016). Corrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69](S0026271415302535)(10.1016/j.microrel.2015.12.007). Microelectronics Reliability, 67, 159. https://doi.org/10.1016/j.microrel.2016.09.003

@article{83cfb45f5f334c819fb0a8feac5d9efc,

title = "Corrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69](S0026271415302535)(10.1016/j.microrel.2015.12.007)",

abstract = "The authors wish to update < Authors of article: Weiliang Wanga,b, Karim Khanb, Xingye Zhangc, Haiming Qinb, Jun Jiangb, Lijing Miaob, Kemin Jiangb, Pengjun Wanga⁎, Mingzhi Daib⁎, Junhao Chud⁎ (⁎ Means corresponding authors.) Affiliations of authors: a. Institute of Circuits and Systems, Ningbo University, Ningbo 315211, China b. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China c. Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China d. Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, 500 Dong-chuan Road, Shanghai 200241, China >. The authors would like to apologise for any inconvenience caused.",

author = "Weiliang Wang and Karim Khan and Xingye Zhang and Haiming Qin and Jun Jiang and Lijing Miao and Kemin Jiang and Pengjun Wang and Mingzhi Dai and Junhao Chu",

note = "Publisher Copyright: {\textcopyright} 2016",

year = "2016",

month = dec,

day = "1",

doi = "10.1016/j.microrel.2016.09.003",

language = "英语",

volume = "67",

pages = "159",

journal = "Microelectronics Reliability",

issn = "0026-2714",

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Wang, W, Khan, K, Zhang, X, Qin, H, Jiang, J, Miao, L, Jiang, K, Wang, P, Dai, M & Chu, J 2016, 'Corrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69](S0026271415302535)(10.1016/j.microrel.2015.12.007)', Microelectronics Reliability, vol. 67, pp. 159. https://doi.org/10.1016/j.microrel.2016.09.003

Corrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69](S0026271415302535)(10.1016/j.microrel.2015.12.007). / Wang, Weiliang; Khan, Karim; Zhang, Xingye et al.
In: Microelectronics Reliability, Vol. 67, 01.12.2016, p. 159.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Corrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69](S0026271415302535)(10.1016/j.microrel.2015.12.007)

AU - Wang, Weiliang

AU - Khan, Karim

AU - Zhang, Xingye

AU - Qin, Haiming

AU - Jiang, Jun

AU - Miao, Lijing

AU - Jiang, Kemin

AU - Wang, Pengjun

AU - Dai, Mingzhi

AU - Chu, Junhao

PY - 2016/12/1

Y1 - 2016/12/1

N2 - The authors wish to update < Authors of article: Weiliang Wanga,b, Karim Khanb, Xingye Zhangc, Haiming Qinb, Jun Jiangb, Lijing Miaob, Kemin Jiangb, Pengjun Wanga⁎, Mingzhi Daib⁎, Junhao Chud⁎ (⁎ Means corresponding authors.) Affiliations of authors: a. Institute of Circuits and Systems, Ningbo University, Ningbo 315211, China b. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China c. Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China d. Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, 500 Dong-chuan Road, Shanghai 200241, China >. The authors would like to apologise for any inconvenience caused.

AB - The authors wish to update < Authors of article: Weiliang Wanga,b, Karim Khanb, Xingye Zhangc, Haiming Qinb, Jun Jiangb, Lijing Miaob, Kemin Jiangb, Pengjun Wanga⁎, Mingzhi Daib⁎, Junhao Chud⁎ (⁎ Means corresponding authors.) Affiliations of authors: a. Institute of Circuits and Systems, Ningbo University, Ningbo 315211, China b. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China c. Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China d. Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, 500 Dong-chuan Road, Shanghai 200241, China >. The authors would like to apologise for any inconvenience caused.

UR - https://www.scopus.com/pages/publications/85006274150

U2 - 10.1016/j.microrel.2016.09.003

DO - 10.1016/j.microrel.2016.09.003

M3 - 评论/辩论

AN - SCOPUS:85006274150

SN - 0026-2714

VL - 67

SP - 159

JO - Microelectronics Reliability

JF - Microelectronics Reliability

ER -

Corrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69](S0026271415302535)(10.1016/j.microrel.2015.12.007)

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