Abstract
Optical absorption and emission spectra are the important quantifiable properties for CuI as a promising optoelectronic material. Previous research on the sputter deposition of CuI focuses on room-temperature growth. Herein, the effect of growth temperature on the selected optical features of sputtered CuI thin films is investigated. An enhanced visible light transparency and a steeper absorption edge are achieved for CuI thin films by optimizing the growth temperature. The PL intensity ratio of free exciton to defect-related emission increases with increasing substrate temperature. These results suggest a strategy of growth temperature optimization for the enhanced absorption and emission of CuI for advanced optoelectronic applications.
| Original language | English |
|---|---|
| Article number | 2000431 |
| Journal | Physica Status Solidi - Rapid Research Letters |
| Volume | 15 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2021 |
Keywords
- bandgap
- copper iodide
- growth temperatures
- photoluminescence (PL) emissions
- thin films