Conductance mechanisms of CdTe-Hg0.53Cd0.47Te Interface

Xinchang Zhang; Guozhen Zheng; Yongsheng Gui; Shaoling Guo; Junhao Chu

Conductance mechanisms of CdTe-Hg_0.53Cd_0.47Te Interface

Xinchang Zhang, Guozhen Zheng, Yongsheng Gui, Shaoling Guo, Junhao Chu

Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

Capacitance-Voltage (C-V) and Conductance-Voltage (C-V) study of Hg_0.53Cd_0.47Te/CdTe interface is reported. The conductance peak at the onset of strong inversion for n-type Hg_0.53CdTe_0.47 MIS structure has been ascribed to indirect tunneling assisted by interface states. For p-type Hg_0.53Cd_0.47Te MIS structure, the oscillatory conductance in strong inversion region is caused by bulk trap assisted tunneling from 3D valence band to 2D subband of the inversion surface. This shows that tunneling for p-type MIS structure is insensitive to the interface states. From the generation-recombination conductance peaks in depletion region for p-type Hg_0.53Cd_0.47Te, conductance method is used to obtain the density, response time and capture cross-section of CdTe/HgCdTe interface states and their distributions in energy band gap.

Original language	English
Pages (from-to)	493-497
Number of pages	5
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	19
Issue number	7
State	Published - 1998
Externally published	Yes

Cite this

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title = "Conductance mechanisms of CdTe-Hg0.53Cd0.47Te Interface",

abstract = "Capacitance-Voltage (C-V) and Conductance-Voltage (C-V) study of Hg0.53Cd0.47Te/CdTe interface is reported. The conductance peak at the onset of strong inversion for n-type Hg0.53CdTe0.47 MIS structure has been ascribed to indirect tunneling assisted by interface states. For p-type Hg0.53Cd0.47Te MIS structure, the oscillatory conductance in strong inversion region is caused by bulk trap assisted tunneling from 3D valence band to 2D subband of the inversion surface. This shows that tunneling for p-type MIS structure is insensitive to the interface states. From the generation-recombination conductance peaks in depletion region for p-type Hg0.53Cd0.47Te, conductance method is used to obtain the density, response time and capture cross-section of CdTe/HgCdTe interface states and their distributions in energy band gap.",

author = "Xinchang Zhang and Guozhen Zheng and Yongsheng Gui and Shaoling Guo and Junhao Chu",

year = "1998",

language = "英语",

volume = "19",

pages = "493--497",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "7",

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TY - JOUR

T1 - Conductance mechanisms of CdTe-Hg0.53Cd0.47Te Interface

AU - Zhang, Xinchang

AU - Zheng, Guozhen

AU - Gui, Yongsheng

AU - Guo, Shaoling

AU - Chu, Junhao

PY - 1998

Y1 - 1998

N2 - Capacitance-Voltage (C-V) and Conductance-Voltage (C-V) study of Hg0.53Cd0.47Te/CdTe interface is reported. The conductance peak at the onset of strong inversion for n-type Hg0.53CdTe0.47 MIS structure has been ascribed to indirect tunneling assisted by interface states. For p-type Hg0.53Cd0.47Te MIS structure, the oscillatory conductance in strong inversion region is caused by bulk trap assisted tunneling from 3D valence band to 2D subband of the inversion surface. This shows that tunneling for p-type MIS structure is insensitive to the interface states. From the generation-recombination conductance peaks in depletion region for p-type Hg0.53Cd0.47Te, conductance method is used to obtain the density, response time and capture cross-section of CdTe/HgCdTe interface states and their distributions in energy band gap.

AB - Capacitance-Voltage (C-V) and Conductance-Voltage (C-V) study of Hg0.53Cd0.47Te/CdTe interface is reported. The conductance peak at the onset of strong inversion for n-type Hg0.53CdTe0.47 MIS structure has been ascribed to indirect tunneling assisted by interface states. For p-type Hg0.53Cd0.47Te MIS structure, the oscillatory conductance in strong inversion region is caused by bulk trap assisted tunneling from 3D valence band to 2D subband of the inversion surface. This shows that tunneling for p-type MIS structure is insensitive to the interface states. From the generation-recombination conductance peaks in depletion region for p-type Hg0.53Cd0.47Te, conductance method is used to obtain the density, response time and capture cross-section of CdTe/HgCdTe interface states and their distributions in energy band gap.

UR - https://www.scopus.com/pages/publications/0032256385

M3 - 文章

AN - SCOPUS:0032256385

SN - 0253-4177

VL - 19

SP - 493

EP - 497

JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 7

ER -

Conductance mechanisms of CdTe-Hg_0.53Cd_0.47Te Interface

Abstract

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