Compositional dependence of photovoltaic properties of Cu2ZnSnSe4 thin film solar cell: Experiment and simulation

Jun He; Xiaoshuang Lu; Xinran Li; Yuchen Dong; Fangyu Yue; Ye Chen; Lin Sun; Pingxiong Yang; Junhao Chu

doi:10.1016/j.solener.2017.11.017

Compositional dependence of photovoltaic properties of Cu₂ZnSnSe₄ thin film solar cell: Experiment and simulation

Jun He, Xiaoshuang Lu, Xinran Li, Yuchen Dong, Fangyu Yue, Ye Chen, Lin Sun, Pingxiong Yang, Junhao Chu

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

In this paper, we have investigated the influence of Cu composition on the properties of Cu₂ZnSnSe₄ (CZTSe) thin film, and the device performances of CZTSe solar cells. CZTSe thin films were fabricated by selenization of sputtered stacked metallic precursors, and the conversion efficiency of Cu-poor CZTSe solar cell is 4.83%. The device simulation on CZTSe solar cell combined with experimental data indicates that the Cu-poor sample with lower Zn_Cu donor defect concentration exhibits relatively high efficiency. The large open circuit voltage (V_oc) deficit and high series resistance (R_s) are responsible for the efficiency limitation of Cu-poor CZTSe solar cell. Large V_oc deficit and high R_s are likely to originate from [Cu_Zn + Zn_Cu] defect cluster and the formed MoSe₂ between CZTSe and Mo films, respectively.

Original language	English
Pages (from-to)	572-578
Number of pages	7
Journal	Solar Energy
Volume	159
DOIs	https://doi.org/10.1016/j.solener.2017.11.017
State	Published - 1 Jan 2018

Keywords

Copper composition
CuZnSnSe solar cells
Defects
Device simulation
Photovoltaic properties

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.solener.2017.11.017

Cite this

@article{537c1e9e9e6c4332a125c32b96a555fb,

title = "Compositional dependence of photovoltaic properties of Cu2ZnSnSe4 thin film solar cell: Experiment and simulation",

abstract = "In this paper, we have investigated the influence of Cu composition on the properties of Cu2ZnSnSe4 (CZTSe) thin film, and the device performances of CZTSe solar cells. CZTSe thin films were fabricated by selenization of sputtered stacked metallic precursors, and the conversion efficiency of Cu-poor CZTSe solar cell is 4.83\%. The device simulation on CZTSe solar cell combined with experimental data indicates that the Cu-poor sample with lower ZnCu donor defect concentration exhibits relatively high efficiency. The large open circuit voltage (Voc) deficit and high series resistance (Rs) are responsible for the efficiency limitation of Cu-poor CZTSe solar cell. Large Voc deficit and high Rs are likely to originate from [CuZn + ZnCu] defect cluster and the formed MoSe2 between CZTSe and Mo films, respectively.",

keywords = "Copper composition, CuZnSnSe solar cells, Defects, Device simulation, Photovoltaic properties",

author = "Jun He and Xiaoshuang Lu and Xinran Li and Yuchen Dong and Fangyu Yue and Ye Chen and Lin Sun and Pingxiong Yang and Junhao Chu",

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doi = "10.1016/j.solener.2017.11.017",

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TY - JOUR

T1 - Compositional dependence of photovoltaic properties of Cu2ZnSnSe4 thin film solar cell

T2 - Experiment and simulation

AU - He, Jun

AU - Lu, Xiaoshuang

AU - Li, Xinran

AU - Dong, Yuchen

AU - Yue, Fangyu

AU - Chen, Ye

AU - Sun, Lin

AU - Yang, Pingxiong

AU - Chu, Junhao

PY - 2018/1/1

Y1 - 2018/1/1

N2 - In this paper, we have investigated the influence of Cu composition on the properties of Cu2ZnSnSe4 (CZTSe) thin film, and the device performances of CZTSe solar cells. CZTSe thin films were fabricated by selenization of sputtered stacked metallic precursors, and the conversion efficiency of Cu-poor CZTSe solar cell is 4.83%. The device simulation on CZTSe solar cell combined with experimental data indicates that the Cu-poor sample with lower ZnCu donor defect concentration exhibits relatively high efficiency. The large open circuit voltage (Voc) deficit and high series resistance (Rs) are responsible for the efficiency limitation of Cu-poor CZTSe solar cell. Large Voc deficit and high Rs are likely to originate from [CuZn + ZnCu] defect cluster and the formed MoSe2 between CZTSe and Mo films, respectively.

AB - In this paper, we have investigated the influence of Cu composition on the properties of Cu2ZnSnSe4 (CZTSe) thin film, and the device performances of CZTSe solar cells. CZTSe thin films were fabricated by selenization of sputtered stacked metallic precursors, and the conversion efficiency of Cu-poor CZTSe solar cell is 4.83%. The device simulation on CZTSe solar cell combined with experimental data indicates that the Cu-poor sample with lower ZnCu donor defect concentration exhibits relatively high efficiency. The large open circuit voltage (Voc) deficit and high series resistance (Rs) are responsible for the efficiency limitation of Cu-poor CZTSe solar cell. Large Voc deficit and high Rs are likely to originate from [CuZn + ZnCu] defect cluster and the formed MoSe2 between CZTSe and Mo films, respectively.

KW - Copper composition

KW - CuZnSnSe solar cells

KW - Defects

KW - Device simulation

KW - Photovoltaic properties

UR - https://www.scopus.com/pages/publications/85034656324

U2 - 10.1016/j.solener.2017.11.017

DO - 10.1016/j.solener.2017.11.017

M3 - 文章

AN - SCOPUS:85034656324

SN - 0038-092X

VL - 159

SP - 572

EP - 578

JO - Solar Energy

JF - Solar Energy

ER -