Competing conduction mechanisms of two-dimensional electrons and bulk-like electrons in the n-type surface of the naturally oxidized p-type HgCdTe thin film

  • T. Lin*
  • , L. Y. Shang
  • , W. Z. Zhou
  • , X. J. Meng
  • , J. L. Sun
  • , G. Yu
  • , S. L. Guo
  • , J. H. Chu
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The surface transport properties of naturally oxidized p-type Hg 0.776Cd 0.224Te thin film were investigated in the magnetic-field region 0-14 T and in the temperature region 8-300 K. The Hall electron concentration increases with temperature, while the surface concentration of the two-dimensional electrons in the naturally oxidized surface, calculated by Shubnikov-de Haas oscillations, decreases as temperature increases at temperatures below 20 K. The contradiction and the extraordinary quantum Hall filling factors are accounted for by assuming extra bulk-like electrons in the surface region, which dominate the surface transport properties at temperatures over 8 K.

Original languageEnglish
Pages (from-to)703-707
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume106
Issue number3
DOIs
StatePublished - Mar 2012

Keywords

  • Hall effect
  • HgCdTe
  • Oxide
  • Surface property
  • Transport and mobility
  • Two-dimensional electron gas

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