Competing Built-In Electric Fields in Au/MoS₂/WSe₂ Dual Junction Photodetectors for Broadband VIS-IR Detection

Van der Waals (vdW) heterostructures are attractive for optoelectronic devices due to their lattice-mismatch tolerance and tunable band structures. Here, we report a gate-tunable Au/MoS₂/WSe₂ dual junction photodetector featuring competing asymmetric built-in electric fields. Spatially resolved photocurrent measurements reveal that selective utilization of these built-in electric fields decouples the transport dynamics of dark and photogenerated carriers. Such decoupling allows for independent modulation of the dark current and photocurrent, enabling the concurrent realization of the ultralow dark current and high photocurrent. Moreover, gate-voltage modulation enhances the photoresponse by ~245%, yielding a detectivity of 1.98 × 10¹² Jones over the 532–940 nm range. Imaging and optical communication further verify the device’s practical potential. These results provide a viable route toward high-sensitivity and electrically reconfigurable broadband photodetectors.