Comparison of Two Noise Equivalent Circuit Models for GaAs and InP High-Electron-Mobility Transistors

Ao Zhang; Jianjun Gao

doi:10.1109/TED.2024.3508670

Comparison of Two Noise Equivalent Circuit Models for GaAs and InP High-Electron-Mobility Transistors

Ao Zhang
, Jianjun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

This article presented a novel approach for the modeling of noise behavior for GaAs and InP high-electron-mobility transistors (HEMTs). Closed-form expressions for minimum noise figure F_min, noise resistance R_n, optimum source conductance G_opt, and optimum source susceptance B_opt based on the noise equivalent circuit model are derived. The model is verified by measurements of the four noise parameters of a GaAs HEMT up to 26 GHz and an InP HEMT up to 40 GHz. The W-band low noise amplifier (LNA) is designed to validate the noise model for HEMT.

Original language	English
Pages (from-to)	154-161
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	72
Issue number	1
DOIs	https://doi.org/10.1109/TED.2024.3508670
State	Published - 2025

Keywords

Equivalent circuit model
high-electron-mobility transistor (HEMT)
noise model
parameter extraction

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@article{01f132a21d144c1f899255a47dd643c2,

title = "Comparison of Two Noise Equivalent Circuit Models for GaAs and InP High-Electron-Mobility Transistors",

abstract = "This article presented a novel approach for the modeling of noise behavior for GaAs and InP high-electron-mobility transistors (HEMTs). Closed-form expressions for minimum noise figure Fmin, noise resistance Rn, optimum source conductance Gopt, and optimum source susceptance Bopt based on the noise equivalent circuit model are derived. The model is verified by measurements of the four noise parameters of a GaAs HEMT up to 26 GHz and an InP HEMT up to 40 GHz. The W-band low noise amplifier (LNA) is designed to validate the noise model for HEMT.",

keywords = "Equivalent circuit model, high-electron-mobility transistor (HEMT), noise model, parameter extraction",

author = "Ao Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2025",

doi = "10.1109/TED.2024.3508670",

language = "英语",

volume = "72",

pages = "154--161",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Comparison of Two Noise Equivalent Circuit Models for GaAs and InP High-Electron-Mobility Transistors

AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2025

Y1 - 2025

N2 - This article presented a novel approach for the modeling of noise behavior for GaAs and InP high-electron-mobility transistors (HEMTs). Closed-form expressions for minimum noise figure Fmin, noise resistance Rn, optimum source conductance Gopt, and optimum source susceptance Bopt based on the noise equivalent circuit model are derived. The model is verified by measurements of the four noise parameters of a GaAs HEMT up to 26 GHz and an InP HEMT up to 40 GHz. The W-band low noise amplifier (LNA) is designed to validate the noise model for HEMT.

AB - This article presented a novel approach for the modeling of noise behavior for GaAs and InP high-electron-mobility transistors (HEMTs). Closed-form expressions for minimum noise figure Fmin, noise resistance Rn, optimum source conductance Gopt, and optimum source susceptance Bopt based on the noise equivalent circuit model are derived. The model is verified by measurements of the four noise parameters of a GaAs HEMT up to 26 GHz and an InP HEMT up to 40 GHz. The W-band low noise amplifier (LNA) is designed to validate the noise model for HEMT.

KW - Equivalent circuit model

KW - high-electron-mobility transistor (HEMT)

KW - noise model

KW - parameter extraction

UR - https://www.scopus.com/pages/publications/85211491216

U2 - 10.1109/TED.2024.3508670

DO - 10.1109/TED.2024.3508670

M3 - 文章

AN - SCOPUS:85211491216

SN - 0018-9383

VL - 72

SP - 154

EP - 161

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

ER -

Comparison of Two Noise Equivalent Circuit Models for GaAs and InP High-Electron-Mobility Transistors

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Keywords

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