Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process

Ting Zhang; Yan Cheng; Zhitang Song; Bo Liu; Songlin Feng; Xiaodong Han; Ze Zhang; Bomy Chen

doi:10.1016/j.scriptamat.2008.01.048

Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process

Ting Zhang^*, Yan Cheng, Zhitang Song, Bo Liu, Songlin Feng, Xiaodong Han, Ze Zhang, Bomy Chen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The crystallization of Ge-Sb-Te and Si-Sb-Te phase-change materials has been characterized by in situ time-dependent resistance measurement and transmission electron microscopy. Although silicon has various properties that are similar to those of germanium, Si-Sb-Te and Ge-Sb-Te crystallize via different processes. Si-Sb-Te has a complex structure (mainly hexagonal) while Ge-Sb-Te has a simple face-centered cubic structure when annealed at 433 K for several hours.

Original language	English
Pages (from-to)	977-980
Number of pages	4
Journal	Scripta Materialia
Volume	58
Issue number	11
DOIs	https://doi.org/10.1016/j.scriptamat.2008.01.048
State	Published - Jun 2008
Externally published	Yes

Keywords

GeSbTe
Phase-change material
Phase-change memory
SiSbTe

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10.1016/j.scriptamat.2008.01.048

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title = "Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process",

abstract = "The crystallization of Ge-Sb-Te and Si-Sb-Te phase-change materials has been characterized by in situ time-dependent resistance measurement and transmission electron microscopy. Although silicon has various properties that are similar to those of germanium, Si-Sb-Te and Ge-Sb-Te crystallize via different processes. Si-Sb-Te has a complex structure (mainly hexagonal) while Ge-Sb-Te has a simple face-centered cubic structure when annealed at 433 K for several hours.",

keywords = "GeSbTe, Phase-change material, Phase-change memory, SiSbTe",

author = "Ting Zhang and Yan Cheng and Zhitang Song and Bo Liu and Songlin Feng and Xiaodong Han and Ze Zhang and Bomy Chen",

year = "2008",

month = jun,

doi = "10.1016/j.scriptamat.2008.01.048",

language = "英语",

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journal = "Scripta Materialia",

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T1 - Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process

AU - Zhang, Ting

AU - Cheng, Yan

AU - Song, Zhitang

AU - Liu, Bo

AU - Feng, Songlin

AU - Han, Xiaodong

AU - Zhang, Ze

AU - Chen, Bomy

PY - 2008/6

Y1 - 2008/6

N2 - The crystallization of Ge-Sb-Te and Si-Sb-Te phase-change materials has been characterized by in situ time-dependent resistance measurement and transmission electron microscopy. Although silicon has various properties that are similar to those of germanium, Si-Sb-Te and Ge-Sb-Te crystallize via different processes. Si-Sb-Te has a complex structure (mainly hexagonal) while Ge-Sb-Te has a simple face-centered cubic structure when annealed at 433 K for several hours.

AB - The crystallization of Ge-Sb-Te and Si-Sb-Te phase-change materials has been characterized by in situ time-dependent resistance measurement and transmission electron microscopy. Although silicon has various properties that are similar to those of germanium, Si-Sb-Te and Ge-Sb-Te crystallize via different processes. Si-Sb-Te has a complex structure (mainly hexagonal) while Ge-Sb-Te has a simple face-centered cubic structure when annealed at 433 K for several hours.

KW - GeSbTe

KW - Phase-change material

KW - Phase-change memory

KW - SiSbTe

UR - https://www.scopus.com/pages/publications/40949157039

U2 - 10.1016/j.scriptamat.2008.01.048

DO - 10.1016/j.scriptamat.2008.01.048

M3 - 文章

AN - SCOPUS:40949157039

SN - 1359-6462

VL - 58

SP - 977

EP - 980

JO - Scripta Materialia

JF - Scripta Materialia

IS - 11

ER -

Comparison of the crystallization of Ge-Sb-Te and Si-Sb-Te in a constant-temperature annealing process

Abstract

Keywords

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