Comparative raman scattering studies of gaas/alxga1-xas and alxga1-xas/alas superlattices

  • Zhang Wang*
  • , Han He-Xiang
  • , Chen Ye
  • , L. I. Guo-Hua
  • , Wang Zhao-Ping
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The room-temperature Raman scattering studies of longitudinal optic phonons in AlAs/AlxGa1-xAs and GaAs/AlxGai1-xAs short-period superlattices with different layer thicknesses were reported. The AlAs LO modes confined in AlAs layers and GaAs-like LO modes confined in AlxGa1-xAs layers were observed in AlAs/AlxGa1-xAs superlattices under off-resonance conditions. And the GaAs LO modes confined in GaAs layers and AlAs-like LO modes confined in AlxGa1-xAs layers were observed in GaAs/AlxGa1-xAs superlattices. In addition, the AlAs interface mode in AlAs/AlxGa1-xAs was also observed under near-resonance conditions. Based on the linear chain mode, the frequencies of confined LO modes measured by Raman scattering were unfolded according to q=m/n+1(2π0) , by which the dispersion curves of AlAs-like and GaAs-like LO phonons in AlxGa1-xAs mixed crystal were obtained.

Original languageEnglish
Pages (from-to)193-194
Number of pages2
JournalHongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Volume18
Issue number3
StatePublished - 1999
Externally publishedYes

Keywords

  • Lo modes
  • Raman scattering
  • Superlattices

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