Compact Cu2ZnSn(S, Se)4 thin films fabricated by a simple sol-gel technique

Ke Zhi Zhang; Jia Hua Tao; Jun Feng Liu; Jun He; Yu Chen Dong; Lin Sun; Ping Xiong Yang; Jun Hao Chu

doi:10.3724/SP.J.1077.2014.14065

Compact Cu₂ZnSn(S, Se)₄ thin films fabricated by a simple sol-gel technique

Ke Zhi Zhang, Jia Hua Tao, Jun Feng Liu, Jun He, Yu Chen Dong, Lin Sun, Ping Xiong Yang, Jun Hao Chu

School of Physics and Electronic Science

East China Normal University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Cu₂ZnSn(S_1-xSe_x)₄ (CZTSSe) thin films with a compact and crack-free morphology and large-grain are obtained via a green Sol-Gel process and post-selenization. The fabrication of CZTSSe films is simplified by predigesting preparation process of Cu₂ZnSnS₄ (CZTS) precusor solution and avoiding using sulfurization. Low-toxic ethylene glycol is selected as solvent, and Cu(CH₃COO)₂, Zn(CH₃COO)₂, SnCl₂·2H₂O and thiourea are used as raw materials. Energy dispersive X-ray analyzer (EDX), X-ray diffraction (XRD) and Raman spectra results indicate that all of CZTSSe thin films with the kesterite structure are of Cu-poor and Zn-rich states. Optical band gap (E_opt) of the CZTSSe thin films decreases from 1.51 to 1.14 eV with increasing Se content.

Original language	English
Pages (from-to)	781-784
Number of pages	4
Journal	Wuji Cailiao Xuebao/Journal of Inorganic Materials
Volume	29
Issue number	7
DOIs	https://doi.org/10.3724/SP.J.1077.2014.14065
State	Published - Jul 2014

Keywords

CZTSSe
Selenization
Sol-Gel
Thin film

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10.3724/SP.J.1077.2014.14065

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@article{0995c8fd4f8c414781ce83d5cbe9862d,

title = "Compact Cu2ZnSn(S, Se)4 thin films fabricated by a simple sol-gel technique",

abstract = "Cu2ZnSn(S1-xSex)4 (CZTSSe) thin films with a compact and crack-free morphology and large-grain are obtained via a green Sol-Gel process and post-selenization. The fabrication of CZTSSe films is simplified by predigesting preparation process of Cu2ZnSnS4 (CZTS) precusor solution and avoiding using sulfurization. Low-toxic ethylene glycol is selected as solvent, and Cu(CH3COO)2, Zn(CH3COO)2, SnCl2·2H2O and thiourea are used as raw materials. Energy dispersive X-ray analyzer (EDX), X-ray diffraction (XRD) and Raman spectra results indicate that all of CZTSSe thin films with the kesterite structure are of Cu-poor and Zn-rich states. Optical band gap (Eopt) of the CZTSSe thin films decreases from 1.51 to 1.14 eV with increasing Se content.",

keywords = "CZTSSe, Selenization, Sol-Gel, Thin film",

author = "Zhang, \{Ke Zhi\} and Tao, \{Jia Hua\} and Liu, \{Jun Feng\} and Jun He and Dong, \{Yu Chen\} and Lin Sun and Yang, \{Ping Xiong\} and Chu, \{Jun Hao\}",

year = "2014",

month = jul,

doi = "10.3724/SP.J.1077.2014.14065",

language = "英语",

volume = "29",

pages = "781--784",

journal = "Wuji Cailiao Xuebao/Journal of Inorganic Materials",

issn = "1000-324X",

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number = "7",

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TY - JOUR

T1 - Compact Cu2ZnSn(S, Se)4 thin films fabricated by a simple sol-gel technique

AU - Zhang, Ke Zhi

AU - Tao, Jia Hua

AU - Liu, Jun Feng

AU - He, Jun

AU - Dong, Yu Chen

AU - Sun, Lin

AU - Yang, Ping Xiong

AU - Chu, Jun Hao

PY - 2014/7

Y1 - 2014/7

N2 - Cu2ZnSn(S1-xSex)4 (CZTSSe) thin films with a compact and crack-free morphology and large-grain are obtained via a green Sol-Gel process and post-selenization. The fabrication of CZTSSe films is simplified by predigesting preparation process of Cu2ZnSnS4 (CZTS) precusor solution and avoiding using sulfurization. Low-toxic ethylene glycol is selected as solvent, and Cu(CH3COO)2, Zn(CH3COO)2, SnCl2·2H2O and thiourea are used as raw materials. Energy dispersive X-ray analyzer (EDX), X-ray diffraction (XRD) and Raman spectra results indicate that all of CZTSSe thin films with the kesterite structure are of Cu-poor and Zn-rich states. Optical band gap (Eopt) of the CZTSSe thin films decreases from 1.51 to 1.14 eV with increasing Se content.

AB - Cu2ZnSn(S1-xSex)4 (CZTSSe) thin films with a compact and crack-free morphology and large-grain are obtained via a green Sol-Gel process and post-selenization. The fabrication of CZTSSe films is simplified by predigesting preparation process of Cu2ZnSnS4 (CZTS) precusor solution and avoiding using sulfurization. Low-toxic ethylene glycol is selected as solvent, and Cu(CH3COO)2, Zn(CH3COO)2, SnCl2·2H2O and thiourea are used as raw materials. Energy dispersive X-ray analyzer (EDX), X-ray diffraction (XRD) and Raman spectra results indicate that all of CZTSSe thin films with the kesterite structure are of Cu-poor and Zn-rich states. Optical band gap (Eopt) of the CZTSSe thin films decreases from 1.51 to 1.14 eV with increasing Se content.

KW - CZTSSe

KW - Selenization

KW - Sol-Gel

KW - Thin film

UR - https://www.scopus.com/pages/publications/84904872748

U2 - 10.3724/SP.J.1077.2014.14065

DO - 10.3724/SP.J.1077.2014.14065

M3 - 文章

AN - SCOPUS:84904872748

SN - 1000-324X

VL - 29

SP - 781

EP - 784

JO - Wuji Cailiao Xuebao/Journal of Inorganic Materials

JF - Wuji Cailiao Xuebao/Journal of Inorganic Materials

IS - 7

ER -

Compact Cu₂ZnSn(S, Se)₄ thin films fabricated by a simple sol-gel technique

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Keywords

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