Abstract
An on-chip amplified spontaneous emission (ASE) source from an optical waveguide fabricated on Er3⁺-doped thin-film lithium niobate (Er: TFLN), is presented. The integrated device achieves a broadband output power of 9.16 mW spanning the C+L band, corresponding to a slope efficiency of 4.7% relative to the absorbed pump power. The device features low propagation loss, large mode field, and single-mode propagation enabled by the photolithography assisted chemo-mechanic etch technique.
| Original language | English |
|---|---|
| Journal | Laser and Photonics Reviews |
| DOIs | |
| State | Accepted/In press - 2025 |
Keywords
- amplified spontaneous emission
- light source
- photonic integrated circuits
- thin film lithium niobate