Chip-Based Amplified Spontaneous Emission Source on Er3+-Doped Thin Film Lithium Niobate

  • Qinfen Huang
  • , Huiting Song
  • , Zhiwei Fang*
  • , Zhe Wang
  • , Lvbin Song
  • , Yunpeng Song
  • , Jianping Yu
  • , Min Wang*
  • , Ya Cheng*
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

An on-chip amplified spontaneous emission (ASE) source from an optical waveguide fabricated on Er3⁺-doped thin-film lithium niobate (Er: TFLN), is presented. The integrated device achieves a broadband output power of 9.16 mW spanning the C+L band, corresponding to a slope efficiency of 4.7% relative to the absorbed pump power. The device features low propagation loss, large mode field, and single-mode propagation enabled by the photolithography assisted chemo-mechanic etch technique.

Original languageEnglish
JournalLaser and Photonics Reviews
DOIs
StateAccepted/In press - 2025

Keywords

  • amplified spontaneous emission
  • light source
  • photonic integrated circuits
  • thin film lithium niobate

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