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Chemical vapor deposition of polycrystalline diamond films onto the Si substrates coated by Si3N4 intermediate layers

  • Ning Xu*
  • , Zhihao Zheng
  • , Zhuo Sun
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Polycrystalline diamond films have been deposited onto Si3N4-coated silicon substrates using thermal chemical vapor deposition (CVD). The defects on the amorphous layer played an essential role in diamond nucleation. After the deposition, very few diamond crystallites were found on the untreated Si3N4 coating, while a diamond film had been formed on the ultrasonically treated Si3N4 coating with diamond powder. The adhesion of diamond film to Si3N4-coated Si substrates was stronger than that of diamond film to Si substrate and decreased as the CH4 concentration increased. The erosion resistance of diamond film on Si3N4-coated Si substrate was much stronger than that of Si3N4 film on Si substrate.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages591
Number of pages1
ISBN (Print)0819417084
StatePublished - 1994
EventSecond Int. Conference on Thin Film Physics and Applications - Shanghai, China
Duration: 15 Apr 199415 Apr 1994

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume2364
ISSN (Print)0277-786X

Conference

ConferenceSecond Int. Conference on Thin Film Physics and Applications
CityShanghai, China
Period15/04/9415/04/94

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