Characterizations of radiation damages in multi-junction solar cells focused on subcell internal luminescence quantum yields via absolute electroluminescence measurements

Lin Zhu; Masahiro Yoshita; Shaoqiang Chen; Tetsuya Nakamura; Toshimitsu Mochizuki; Changsu Kim; Mitsuru Imaizumi; Yoshihiko Kanemitsu; Hidefumi Akiyama

doi:10.1109/PVSC.2015.7355671

Characterizations of radiation damages in multi-junction solar cells focused on subcell internal luminescence quantum yields via absolute electroluminescence measurements

Lin Zhu, Masahiro Yoshita, Shaoqiang Chen, Tetsuya Nakamura, Toshimitsu Mochizuki, Changsu Kim, Mitsuru Imaizumi, Yoshihiko Kanemitsu, Hidefumi Akiyama

School of Communication and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Via absolute electroluminescence (EL) measurements, we characterized degradations of internal luminescence quantum yields in respective subcells in GaInP/GaAs/Ge triple-junction solar cells after radiation damages by proton irradiations with different energy and fluence. Compared with typical open-circuit-voltage characterizations, the internal luminescence quantum yield turned out to be a sensitive, high-dynamic-range, quantitative, and fair indicator of radiation damage, since it purely represents material-quality change due to radiation damage, independently from small differences in band-gap energy due to alloy composition fluctuations and in other cell structures.

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7355671
State	Published - 14 Dec 2015
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: 14 Jun 2015 → 19 Jun 2015

Publication series

Name	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	14/06/15 → 19/06/15

Keywords

Electroluminescence
Luminescence
Photovoltaic cells
Radiation effects

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/PVSC.2015.7355671

Cite this

Zhu, L., Yoshita, M., Chen, S., Nakamura, T., Mochizuki, T., Kim, C., Imaizumi, M., Kanemitsu, Y., & Akiyama, H. (2015). Characterizations of radiation damages in multi-junction solar cells focused on subcell internal luminescence quantum yields via absolute electroluminescence measurements. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 Article 7355671 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355671

Zhu, Lin ; Yoshita, Masahiro ; Chen, Shaoqiang et al. / Characterizations of radiation damages in multi-junction solar cells focused on subcell internal luminescence quantum yields via absolute electroluminescence measurements. 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

@inproceedings{0b2e855bcfc14d5cbd32e27c0e804d42,

title = "Characterizations of radiation damages in multi-junction solar cells focused on subcell internal luminescence quantum yields via absolute electroluminescence measurements",

abstract = "Via absolute electroluminescence (EL) measurements, we characterized degradations of internal luminescence quantum yields in respective subcells in GaInP/GaAs/Ge triple-junction solar cells after radiation damages by proton irradiations with different energy and fluence. Compared with typical open-circuit-voltage characterizations, the internal luminescence quantum yield turned out to be a sensitive, high-dynamic-range, quantitative, and fair indicator of radiation damage, since it purely represents material-quality change due to radiation damage, independently from small differences in band-gap energy due to alloy composition fluctuations and in other cell structures.",

keywords = "Electroluminescence, Luminescence, Photovoltaic cells, Radiation effects",

author = "Lin Zhu and Masahiro Yoshita and Shaoqiang Chen and Tetsuya Nakamura and Toshimitsu Mochizuki and Changsu Kim and Mitsuru Imaizumi and Yoshihiko Kanemitsu and Hidefumi Akiyama",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7355671",

language = "英语",

series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

address = "美国",

}

Zhu, L, Yoshita, M, Chen, S, Nakamura, T, Mochizuki, T, Kim, C, Imaizumi, M, Kanemitsu, Y & Akiyama, H 2015, Characterizations of radiation damages in multi-junction solar cells focused on subcell internal luminescence quantum yields via absolute electroluminescence measurements. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7355671, 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 14/06/15. https://doi.org/10.1109/PVSC.2015.7355671

Characterizations of radiation damages in multi-junction solar cells focused on subcell internal luminescence quantum yields via absolute electroluminescence measurements. / Zhu, Lin; Yoshita, Masahiro; Chen, Shaoqiang et al.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7355671 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Characterizations of radiation damages in multi-junction solar cells focused on subcell internal luminescence quantum yields via absolute electroluminescence measurements

AU - Zhu, Lin

AU - Yoshita, Masahiro

AU - Chen, Shaoqiang

AU - Nakamura, Tetsuya

AU - Mochizuki, Toshimitsu

AU - Kim, Changsu

AU - Imaizumi, Mitsuru

AU - Kanemitsu, Yoshihiko

AU - Akiyama, Hidefumi

PY - 2015/12/14

Y1 - 2015/12/14

N2 - Via absolute electroluminescence (EL) measurements, we characterized degradations of internal luminescence quantum yields in respective subcells in GaInP/GaAs/Ge triple-junction solar cells after radiation damages by proton irradiations with different energy and fluence. Compared with typical open-circuit-voltage characterizations, the internal luminescence quantum yield turned out to be a sensitive, high-dynamic-range, quantitative, and fair indicator of radiation damage, since it purely represents material-quality change due to radiation damage, independently from small differences in band-gap energy due to alloy composition fluctuations and in other cell structures.

AB - Via absolute electroluminescence (EL) measurements, we characterized degradations of internal luminescence quantum yields in respective subcells in GaInP/GaAs/Ge triple-junction solar cells after radiation damages by proton irradiations with different energy and fluence. Compared with typical open-circuit-voltage characterizations, the internal luminescence quantum yield turned out to be a sensitive, high-dynamic-range, quantitative, and fair indicator of radiation damage, since it purely represents material-quality change due to radiation damage, independently from small differences in band-gap energy due to alloy composition fluctuations and in other cell structures.

KW - Electroluminescence

KW - Luminescence

KW - Photovoltaic cells

KW - Radiation effects

UR - https://www.scopus.com/pages/publications/84961656306

U2 - 10.1109/PVSC.2015.7355671

DO - 10.1109/PVSC.2015.7355671

M3 - 会议稿件

AN - SCOPUS:84961656306

T3 - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Zhu L, Yoshita M, Chen S, Nakamura T, Mochizuki T, Kim C et al. Characterizations of radiation damages in multi-junction solar cells focused on subcell internal luminescence quantum yields via absolute electroluminescence measurements. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7355671. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). doi: 10.1109/PVSC.2015.7355671

Characterizations of radiation damages in multi-junction solar cells focused on subcell internal luminescence quantum yields via absolute electroluminescence measurements

Abstract

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Keywords

UN SDGs

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