Characterization of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures with two subbands occupied

Z. W. Zheng; B. Shen; C. P. Jiang; R. Zhang; Y. Shi; Y. D. Zheng; S. L. Guo; G. Z. Zheng; J. H. Chu

doi:10.1109/ICSICT.2001.982117

Characterization of the two-dimensional electron gas in Al_xGa_1-xN/GaN heterostructures with two subbands occupied

Z. W. Zheng
, B. Shen
, C. P. Jiang
, R. Zhang
, Y. Shi
, Y. D. Zheng
, S. L. Guo
, G. Z. Zheng
, J. H. Chu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Magnetotransport properties of the two-dimensional electron gas (2DEG) in Al_xGa_1-xN/GaN heterostructures have been investigated. We extrapolate that the second subband in the triangular quantum well at the heterointerface starts to be populated at a 2DEG concentration of about 7.23 × 10¹² cm^-1. The quantum scattering time related to the first subband is obtained as 0.144-0.146 ps for the heterostructures. Intersubband scattering is also observed in the heterostructures.

Original language	English
Title of host publication	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Editors	Hiroshi Iwai, Xin-Ping Qu, Bing-Zong Li, Guo-Ping Ru, Paul Yu
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1209-1212
Number of pages	4
ISBN (Electronic)	0780365208, 9780780365209
DOIs	https://doi.org/10.1109/ICSICT.2001.982117
State	Published - 2001
Externally published	Yes
Event	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China Duration: 22 Oct 2001 → 25 Oct 2001

Publication series

Name	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Volume	2

Conference

Conference	6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
Country/Territory	China
City	Shanghai
Period	22/10/01 → 25/10/01

Access to Document

10.1109/ICSICT.2001.982117

Cite this

Zheng, Z. W., Shen, B., Jiang, C. P., Zhang, R., Shi, Y., Zheng, Y. D., Guo, S. L., Zheng, G. Z., & Chu, J. H. (2001). Characterization of the two-dimensional electron gas in Al_xGa_1-xN/GaN heterostructures with two subbands occupied. In H. Iwai, X.-P. Qu, B.-Z. Li, G.-P. Ru, & P. Yu (Eds.), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings (pp. 1209-1212). Article 982117 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; Vol. 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2001.982117

Zheng, Z. W. ; Shen, B. ; Jiang, C. P. et al. / Characterization of the two-dimensional electron gas in Al_xGa_1-xN/GaN heterostructures with two subbands occupied. 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. editor / Hiroshi Iwai ; Xin-Ping Qu ; Bing-Zong Li ; Guo-Ping Ru ; Paul Yu. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 1209-1212 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings).

@inproceedings{6d3daf997f03442d90ad7beb429dee57,

title = "Characterization of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures with two subbands occupied",

abstract = "Magnetotransport properties of the two-dimensional electron gas (2DEG) in AlxGa1-xN/GaN heterostructures have been investigated. We extrapolate that the second subband in the triangular quantum well at the heterointerface starts to be populated at a 2DEG concentration of about 7.23 × 1012 cm-1. The quantum scattering time related to the first subband is obtained as 0.144-0.146 ps for the heterostructures. Intersubband scattering is also observed in the heterostructures.",

author = "Zheng, \{Z. W.\} and B. Shen and Jiang, \{C. P.\} and R. Zhang and Y. Shi and Zheng, \{Y. D.\} and Guo, \{S. L.\} and Zheng, \{G. Z.\} and Chu, \{J. H.\}",

note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 ; Conference date: 22-10-2001 Through 25-10-2001",

year = "2001",

doi = "10.1109/ICSICT.2001.982117",

language = "英语",

series = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1209--1212",

editor = "Hiroshi Iwai and Xin-Ping Qu and Bing-Zong Li and Guo-Ping Ru and Paul Yu",

booktitle = "2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings",

address = "美国",

}

Zheng, ZW, Shen, B, Jiang, CP, Zhang, R, Shi, Y, Zheng, YD, Guo, SL, Zheng, GZ & Chu, JH 2001, Characterization of the two-dimensional electron gas in Al_xGa_1-xN/GaN heterostructures with two subbands occupied. in H Iwai, X-P Qu, B-Z Li, G-P Ru & P Yu (eds), 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings., 982117, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings, vol. 2, Institute of Electrical and Electronics Engineers Inc., pp. 1209-1212, 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001, Shanghai, China, 22/10/01. https://doi.org/10.1109/ICSICT.2001.982117

Characterization of the two-dimensional electron gas in Al_xGa_1-xN/GaN heterostructures with two subbands occupied. / Zheng, Z. W.; Shen, B.; Jiang, C. P. et al.
2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. ed. / Hiroshi Iwai; Xin-Ping Qu; Bing-Zong Li; Guo-Ping Ru; Paul Yu. Institute of Electrical and Electronics Engineers Inc., 2001. p. 1209-1212 982117 (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Characterization of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures with two subbands occupied

AU - Zheng, Z. W.

AU - Shen, B.

AU - Jiang, C. P.

AU - Zhang, R.

AU - Shi, Y.

AU - Zheng, Y. D.

AU - Guo, S. L.

AU - Zheng, G. Z.

AU - Chu, J. H.

PY - 2001

Y1 - 2001

N2 - Magnetotransport properties of the two-dimensional electron gas (2DEG) in AlxGa1-xN/GaN heterostructures have been investigated. We extrapolate that the second subband in the triangular quantum well at the heterointerface starts to be populated at a 2DEG concentration of about 7.23 × 1012 cm-1. The quantum scattering time related to the first subband is obtained as 0.144-0.146 ps for the heterostructures. Intersubband scattering is also observed in the heterostructures.

AB - Magnetotransport properties of the two-dimensional electron gas (2DEG) in AlxGa1-xN/GaN heterostructures have been investigated. We extrapolate that the second subband in the triangular quantum well at the heterointerface starts to be populated at a 2DEG concentration of about 7.23 × 1012 cm-1. The quantum scattering time related to the first subband is obtained as 0.144-0.146 ps for the heterostructures. Intersubband scattering is also observed in the heterostructures.

UR - https://www.scopus.com/pages/publications/84964462230

U2 - 10.1109/ICSICT.2001.982117

DO - 10.1109/ICSICT.2001.982117

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T3 - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

SP - 1209

EP - 1212

BT - 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings

A2 - Iwai, Hiroshi

A2 - Qu, Xin-Ping

A2 - Li, Bing-Zong

A2 - Ru, Guo-Ping

A2 - Yu, Paul

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001

Y2 - 22 October 2001 through 25 October 2001

ER -

Zheng ZW, Shen B, Jiang CP, Zhang R, Shi Y, Zheng YD et al. Characterization of the two-dimensional electron gas in Al_xGa_1-xN/GaN heterostructures with two subbands occupied. In Iwai H, Qu XP, Li BZ, Ru GP, Yu P, editors, 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2001. p. 1209-1212. 982117. (2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings). doi: 10.1109/ICSICT.2001.982117