Characterization of the thermal properties for Si-implanted Sb 2Te3 phase change material

Zhonghua Zhang; Sannian Song; Zhitang Song; Yan Cheng; Yifeng Gu; Bomy Chen

doi:10.1063/1.4812829

Characterization of the thermal properties for Si-implanted Sb ₂Te₃ phase change material

Zhonghua Zhang, Sannian Song, Zhitang Song, Yan Cheng, Yifeng Gu, Bomy Chen

Research output: Contribution to journal › Article › peer-review

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Abstract

The microstructure and thermal properties of Si-implanted Sb ₂Te₃ were investigated. Crystalline Si-implanted Sb ₂Te₃ film with relatively uniform composition depth profile was fabricated, which consists of Si^4-x (0 < x < 1) ions and crystalline Sb₂Te₃. No separated Te phase was found. The crystallization activation energies of crystallization increase with Si dose from 5 × 10¹⁵ to 2.16 × 10¹⁶ Si-ions/cm². The crystallization temperatures of the films are 149, 168, and 174°C with 5 × 10¹⁵, 1 × 10¹⁶, and 2.16 × 10¹⁶ Si-ions/cm² ion implantation, respectively. Furthermore, the Sb₂Te₃ film implanted with the dose of 1 × 10¹⁶ Si-ions/cm² can maintain the data for 10 yr at 85°C, which is comparable to Ge₂Sb ₂Te₅. The results indicate that the Si-implanted Sb ₂Te₃ is a promising candidate for phase change memory application.

Original language	English
Article number	252106
Journal	Applied Physics Letters
Volume	102
Issue number	25
DOIs	https://doi.org/10.1063/1.4812829
State	Published - 24 Jun 2013
Externally published	Yes

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@article{a8e539ec88de40cf8718a54d154b978b,

title = "Characterization of the thermal properties for Si-implanted Sb 2Te3 phase change material",

abstract = "The microstructure and thermal properties of Si-implanted Sb 2Te3 were investigated. Crystalline Si-implanted Sb 2Te3 film with relatively uniform composition depth profile was fabricated, which consists of Si4-x (0 < x < 1) ions and crystalline Sb2Te3. No separated Te phase was found. The crystallization activation energies of crystallization increase with Si dose from 5 × 1015 to 2.16 × 1016 Si-ions/cm2. The crystallization temperatures of the films are 149, 168, and 174°C with 5 × 1015, 1 × 1016, and 2.16 × 1016 Si-ions/cm2 ion implantation, respectively. Furthermore, the Sb2Te3 film implanted with the dose of 1 × 1016 Si-ions/cm2 can maintain the data for 10 yr at 85°C, which is comparable to Ge2Sb 2Te5. The results indicate that the Si-implanted Sb 2Te3 is a promising candidate for phase change memory application.",

author = "Zhonghua Zhang and Sannian Song and Zhitang Song and Yan Cheng and Yifeng Gu and Bomy Chen",

year = "2013",

month = jun,

day = "24",

doi = "10.1063/1.4812829",

language = "英语",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Characterization of the thermal properties for Si-implanted Sb 2Te3 phase change material

AU - Zhang, Zhonghua

AU - Song, Sannian

AU - Song, Zhitang

AU - Cheng, Yan

AU - Gu, Yifeng

AU - Chen, Bomy

PY - 2013/6/24

Y1 - 2013/6/24

N2 - The microstructure and thermal properties of Si-implanted Sb 2Te3 were investigated. Crystalline Si-implanted Sb 2Te3 film with relatively uniform composition depth profile was fabricated, which consists of Si4-x (0 < x < 1) ions and crystalline Sb2Te3. No separated Te phase was found. The crystallization activation energies of crystallization increase with Si dose from 5 × 1015 to 2.16 × 1016 Si-ions/cm2. The crystallization temperatures of the films are 149, 168, and 174°C with 5 × 1015, 1 × 1016, and 2.16 × 1016 Si-ions/cm2 ion implantation, respectively. Furthermore, the Sb2Te3 film implanted with the dose of 1 × 1016 Si-ions/cm2 can maintain the data for 10 yr at 85°C, which is comparable to Ge2Sb 2Te5. The results indicate that the Si-implanted Sb 2Te3 is a promising candidate for phase change memory application.

AB - The microstructure and thermal properties of Si-implanted Sb 2Te3 were investigated. Crystalline Si-implanted Sb 2Te3 film with relatively uniform composition depth profile was fabricated, which consists of Si4-x (0 < x < 1) ions and crystalline Sb2Te3. No separated Te phase was found. The crystallization activation energies of crystallization increase with Si dose from 5 × 1015 to 2.16 × 1016 Si-ions/cm2. The crystallization temperatures of the films are 149, 168, and 174°C with 5 × 1015, 1 × 1016, and 2.16 × 1016 Si-ions/cm2 ion implantation, respectively. Furthermore, the Sb2Te3 film implanted with the dose of 1 × 1016 Si-ions/cm2 can maintain the data for 10 yr at 85°C, which is comparable to Ge2Sb 2Te5. The results indicate that the Si-implanted Sb 2Te3 is a promising candidate for phase change memory application.

UR - https://www.scopus.com/pages/publications/84879850554

U2 - 10.1063/1.4812829

DO - 10.1063/1.4812829

M3 - 文章

AN - SCOPUS:84879850554

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252106

ER -

Characterization of the thermal properties for Si-implanted Sb ₂Te₃ phase change material

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