Characterization of pinhole in patterned oxide buried in bonded silicon-on-insulator wafers by near-infrared scattering topography and transmission microscopy

Xing Wu; Junichi Uchikoshi; Takaaki Hirokane; Ryuta Yamada; Akihiro Takeuchi; Kenta Arima; Mizuho Morita

doi:10.1149/1.2971178

Characterization of pinhole in patterned oxide buried in bonded silicon-on-insulator wafers by near-infrared scattering topography and transmission microscopy

Xing Wu, Junichi Uchikoshi, Takaaki Hirokane, Ryuta Yamada, Akihiro Takeuchi, Kenta Arima, Mizuho Morita

Research output: Contribution to journal › Article › peer-review

Abstract

Patterned oxides buried in bonded silicon-on-insulator (SOI) wafers before thinning have been characterized by near-IR scattering topography and a microscopy combination system. Micron-scaled pinholes in patterned oxides buried in bonded SOI wafers have been observed by the scattering topography. Edges of the patterned oxides have also been observed by both scattering topography and transmission microscopy. With the combination of scattering topography and transmission and reflection microscopy, this system is effective to evaluate the visibility of patterned oxides buried in bonded SOI wafers.

Original language	English
Pages (from-to)	H864-H868
Journal	Journal of the Electrochemical Society
Volume	155
Issue number	11
DOIs	https://doi.org/10.1149/1.2971178
State	Published - 2008
Externally published	Yes

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title = "Characterization of pinhole in patterned oxide buried in bonded silicon-on-insulator wafers by near-infrared scattering topography and transmission microscopy",

abstract = "Patterned oxides buried in bonded silicon-on-insulator (SOI) wafers before thinning have been characterized by near-IR scattering topography and a microscopy combination system. Micron-scaled pinholes in patterned oxides buried in bonded SOI wafers have been observed by the scattering topography. Edges of the patterned oxides have also been observed by both scattering topography and transmission microscopy. With the combination of scattering topography and transmission and reflection microscopy, this system is effective to evaluate the visibility of patterned oxides buried in bonded SOI wafers.",

author = "Xing Wu and Junichi Uchikoshi and Takaaki Hirokane and Ryuta Yamada and Akihiro Takeuchi and Kenta Arima and Mizuho Morita",

year = "2008",

doi = "10.1149/1.2971178",

language = "英语",

volume = "155",

pages = "H864--H868",

journal = "Journal of the Electrochemical Society",

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publisher = "Institute of Physics",

number = "11",

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TY - JOUR

T1 - Characterization of pinhole in patterned oxide buried in bonded silicon-on-insulator wafers by near-infrared scattering topography and transmission microscopy

AU - Wu, Xing

AU - Uchikoshi, Junichi

AU - Hirokane, Takaaki

AU - Yamada, Ryuta

AU - Takeuchi, Akihiro

AU - Arima, Kenta

AU - Morita, Mizuho

PY - 2008

Y1 - 2008

N2 - Patterned oxides buried in bonded silicon-on-insulator (SOI) wafers before thinning have been characterized by near-IR scattering topography and a microscopy combination system. Micron-scaled pinholes in patterned oxides buried in bonded SOI wafers have been observed by the scattering topography. Edges of the patterned oxides have also been observed by both scattering topography and transmission microscopy. With the combination of scattering topography and transmission and reflection microscopy, this system is effective to evaluate the visibility of patterned oxides buried in bonded SOI wafers.

AB - Patterned oxides buried in bonded silicon-on-insulator (SOI) wafers before thinning have been characterized by near-IR scattering topography and a microscopy combination system. Micron-scaled pinholes in patterned oxides buried in bonded SOI wafers have been observed by the scattering topography. Edges of the patterned oxides have also been observed by both scattering topography and transmission microscopy. With the combination of scattering topography and transmission and reflection microscopy, this system is effective to evaluate the visibility of patterned oxides buried in bonded SOI wafers.

UR - https://www.scopus.com/pages/publications/52649163373

U2 - 10.1149/1.2971178

DO - 10.1149/1.2971178

M3 - 文章

AN - SCOPUS:52649163373

SN - 0013-4651

VL - 155

SP - H864-H868

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 11

ER -

Characterization of pinhole in patterned oxide buried in bonded silicon-on-insulator wafers by near-infrared scattering topography and transmission microscopy

Abstract

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