Abstract
From an inclusion model, the material inhomogeneities of Hg1-xCdxTe epilayers were estimated from the anomalous free carrier absorption (FCA) spectra taking into account the composition-in-depth nonuniformity of epilayers. The obtained parameters of the inhomogeneities can also explain the anomalous Hall effect. The investigation offers a nondestructive, simple and reliable tool to characterize the quality of an Hg1-xCdxTe epilayer.
| Original language | English |
|---|---|
| Pages (from-to) | 106-110 |
| Number of pages | 5 |
| Journal | Physics Letters, Section A: General, Atomic and Solid State Physics |
| Volume | 243 |
| Issue number | 1-2 |
| DOIs | |
| State | Published - 15 Jun 1998 |
| Externally published | Yes |
Keywords
- Anomalous hall effect
- HgCdTe epilayer
- Infrared absorption spectra
- Material inhomogeneities