Characterization of material inhomogeneities in Hg1-xCdxTe epilayer by infrared absorption spectra

  • Biao Li*
  • , Yongsheng Gui
  • , Hongjuan Ye
  • , Junhao Chu
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

From an inclusion model, the material inhomogeneities of Hg1-xCdxTe epilayers were estimated from the anomalous free carrier absorption (FCA) spectra taking into account the composition-in-depth nonuniformity of epilayers. The obtained parameters of the inhomogeneities can also explain the anomalous Hall effect. The investigation offers a nondestructive, simple and reliable tool to characterize the quality of an Hg1-xCdxTe epilayer.

Original languageEnglish
Pages (from-to)106-110
Number of pages5
JournalPhysics Letters, Section A: General, Atomic and Solid State Physics
Volume243
Issue number1-2
DOIs
StatePublished - 15 Jun 1998
Externally publishedYes

Keywords

  • Anomalous hall effect
  • HgCdTe epilayer
  • Infrared absorption spectra
  • Material inhomogeneities

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