Characterization of localized laser assisted eutectic bonds

A. W.Y. Tan; F. E.H. Tay; J. Zhang

doi:10.1016/j.sna.2005.07.006

Characterization of localized laser assisted eutectic bonds

A. W.Y. Tan, F. E.H. Tay, J. Zhang

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

An innovative bonding process for silicon and single crystal quartz has been developed and investigated using various material science characterization methods, such as TOF-SIMS, SEM, EDX and XRD. The bonding process combines the principles of laser transmission welding, eutectic bonding and bonding by localized heating. A focused laser beam (low power, max. 0.83 W) is transmitted through a quartz medium to intermediate layers of chromium, gold and tin at the silicon-quartz interface to provide localized heating and bonding. This bonding process is particularly suitable for bonding wafers containing temperature sensitive devices as it confines the temperature increase to a small area. Bond strength of over 15 MPa is comparable to most localized bonding schemes. This process provides a simple yet robust bonding solution with rapid processing time, selectivity of bonded area and corrosion resistant joints.

Original language	English
Pages (from-to)	573-585
Number of pages	13
Journal	Sensors and Actuators A: Physical
Volume	125
Issue number	2
DOIs	https://doi.org/10.1016/j.sna.2005.07.006
State	Published - 10 Jan 2006
Externally published	Yes

Keywords

Eutectic
Gold-tin
Interfacial characterization
Laser bonding
Low temperature
Single crystal quartz-to-silicon

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10.1016/j.sna.2005.07.006

Cite this

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title = "Characterization of localized laser assisted eutectic bonds",

abstract = "An innovative bonding process for silicon and single crystal quartz has been developed and investigated using various material science characterization methods, such as TOF-SIMS, SEM, EDX and XRD. The bonding process combines the principles of laser transmission welding, eutectic bonding and bonding by localized heating. A focused laser beam (low power, max. 0.83 W) is transmitted through a quartz medium to intermediate layers of chromium, gold and tin at the silicon-quartz interface to provide localized heating and bonding. This bonding process is particularly suitable for bonding wafers containing temperature sensitive devices as it confines the temperature increase to a small area. Bond strength of over 15 MPa is comparable to most localized bonding schemes. This process provides a simple yet robust bonding solution with rapid processing time, selectivity of bonded area and corrosion resistant joints.",

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T1 - Characterization of localized laser assisted eutectic bonds

AU - Tan, A. W.Y.

AU - Tay, F. E.H.

AU - Zhang, J.

PY - 2006/1/10

Y1 - 2006/1/10

N2 - An innovative bonding process for silicon and single crystal quartz has been developed and investigated using various material science characterization methods, such as TOF-SIMS, SEM, EDX and XRD. The bonding process combines the principles of laser transmission welding, eutectic bonding and bonding by localized heating. A focused laser beam (low power, max. 0.83 W) is transmitted through a quartz medium to intermediate layers of chromium, gold and tin at the silicon-quartz interface to provide localized heating and bonding. This bonding process is particularly suitable for bonding wafers containing temperature sensitive devices as it confines the temperature increase to a small area. Bond strength of over 15 MPa is comparable to most localized bonding schemes. This process provides a simple yet robust bonding solution with rapid processing time, selectivity of bonded area and corrosion resistant joints.

AB - An innovative bonding process for silicon and single crystal quartz has been developed and investigated using various material science characterization methods, such as TOF-SIMS, SEM, EDX and XRD. The bonding process combines the principles of laser transmission welding, eutectic bonding and bonding by localized heating. A focused laser beam (low power, max. 0.83 W) is transmitted through a quartz medium to intermediate layers of chromium, gold and tin at the silicon-quartz interface to provide localized heating and bonding. This bonding process is particularly suitable for bonding wafers containing temperature sensitive devices as it confines the temperature increase to a small area. Bond strength of over 15 MPa is comparable to most localized bonding schemes. This process provides a simple yet robust bonding solution with rapid processing time, selectivity of bonded area and corrosion resistant joints.

KW - Eutectic

KW - Gold-tin

KW - Interfacial characterization

KW - Laser bonding

KW - Low temperature

KW - Single crystal quartz-to-silicon

UR - https://www.scopus.com/pages/publications/29144509537

U2 - 10.1016/j.sna.2005.07.006

DO - 10.1016/j.sna.2005.07.006

M3 - 文章

AN - SCOPUS:29144509537

SN - 0924-4247

VL - 125

SP - 573

EP - 585

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

IS - 2

ER -

Characterization of localized laser assisted eutectic bonds

Abstract

Keywords

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