Characterization of high-photocurrent and high-speed INP-based uni-traveling-carrier photodiodes at 1.55-μm wavelength

Qianqian Meng; Hong Wang; Chongyang Liu; Jianjun Gao; Yang Tian; Kian Siong Ang; Xin Guo; Bo Gao

doi:10.1002/mop.29997

Characterization of high-photocurrent and high-speed INP-based uni-traveling-carrier photodiodes at 1.55-μm wavelength

Qianqian Meng
, Hong Wang^*
, Chongyang Liu
, Jianjun Gao
, Yang Tian
, Kian Siong Ang
, Xin Guo
, Bo Gao

^*Corresponding author for this work

School of Physics and Electronic Science

Nanyang Technological University
Xi'an Jiaotong University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We demonstrate a semi-analytical parameter extraction method to characterize high-speed and high-photocurrent InP-based uni-traveling-carrier photodiodes with dipole-doped structure. The accuracy of proposed method has been validated with good agreements between the measured and simulated results of reflection coefficients and frequency responses in a wide frequency range up to 40 GHz.

Original language	English
Pages (from-to)	2156-2162
Number of pages	7
Journal	Microwave and Optical Technology Letters
Volume	58
Issue number	9
DOIs	https://doi.org/10.1002/mop.29997
State	Published - 1 Sep 2016

Keywords

3-dB bandwidth
dipole-doped structure
frequency response
parameter extraction
uni-traveling-carrier photodiodes

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10.1002/mop.29997

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@article{3cb609f89db248deb60e673da1f3d8d7,

title = "Characterization of high-photocurrent and high-speed INP-based uni-traveling-carrier photodiodes at 1.55-μm wavelength",

abstract = "We demonstrate a semi-analytical parameter extraction method to characterize high-speed and high-photocurrent InP-based uni-traveling-carrier photodiodes with dipole-doped structure. The accuracy of proposed method has been validated with good agreements between the measured and simulated results of reflection coefficients and frequency responses in a wide frequency range up to 40 GHz.",

keywords = "3-dB bandwidth, dipole-doped structure, frequency response, parameter extraction, uni-traveling-carrier photodiodes",

author = "Qianqian Meng and Hong Wang and Chongyang Liu and Jianjun Gao and Yang Tian and \{Siong Ang\}, Kian and Xin Guo and Bo Gao",

note = "Publisher Copyright: {\textcopyright} 2016 Wiley Periodicals, Inc.",

year = "2016",

month = sep,

day = "1",

doi = "10.1002/mop.29997",

language = "英语",

volume = "58",

pages = "2156--2162",

journal = "Microwave and Optical Technology Letters",

issn = "0895-2477",

publisher = "John Wiley \& Sons Inc.",

number = "9",

}

TY - JOUR

T1 - Characterization of high-photocurrent and high-speed INP-based uni-traveling-carrier photodiodes at 1.55-μm wavelength

AU - Meng, Qianqian

AU - Wang, Hong

AU - Liu, Chongyang

AU - Gao, Jianjun

AU - Tian, Yang

AU - Siong Ang, Kian

AU - Guo, Xin

AU - Gao, Bo

PY - 2016/9/1

Y1 - 2016/9/1

N2 - We demonstrate a semi-analytical parameter extraction method to characterize high-speed and high-photocurrent InP-based uni-traveling-carrier photodiodes with dipole-doped structure. The accuracy of proposed method has been validated with good agreements between the measured and simulated results of reflection coefficients and frequency responses in a wide frequency range up to 40 GHz.

AB - We demonstrate a semi-analytical parameter extraction method to characterize high-speed and high-photocurrent InP-based uni-traveling-carrier photodiodes with dipole-doped structure. The accuracy of proposed method has been validated with good agreements between the measured and simulated results of reflection coefficients and frequency responses in a wide frequency range up to 40 GHz.

KW - 3-dB bandwidth

KW - dipole-doped structure

KW - frequency response

KW - parameter extraction

KW - uni-traveling-carrier photodiodes

UR - https://www.scopus.com/pages/publications/84979018706

U2 - 10.1002/mop.29997

DO - 10.1002/mop.29997

M3 - 文章

AN - SCOPUS:84979018706

SN - 0895-2477

VL - 58

SP - 2156

EP - 2162

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 9

ER -

Characterization of high-photocurrent and high-speed INP-based uni-traveling-carrier photodiodes at 1.55-μm wavelength

Abstract

Keywords

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