Characterization of Hg1-x Cdx Te epitaxial films on various vicinal planes

  • Blao Li*
  • , Jun Hao Chu
  • , Ji Qian Zhu
  • , Xin Qiang Chen
  • , Ju Ying Cao
  • , Ding Yuan Tang
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The Hg1-x Cdx Te films were prepared by a dipping liquid phase epitaxy technique on spherical CdTe substrate with several different misoriented facets. They were characterized by means of micrograph, infrared absorption spectra, Raman scattering, and X-ray double-crystal diffraction. The results show that "near-facet" ( δ < 1°) and "terrace-free" (δ ≈ 1.2°) growth modes are superior in both the planarity and the amount of precipitates.

Original languageEnglish
Pages (from-to)1172-1173
Number of pages2
JournalWuli Xuebao/Acta Physica Sinica
Volume46
Issue number6
StatePublished - 1997
Externally publishedYes

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