Abstract
The Hg1-x Cdx Te films were prepared by a dipping liquid phase epitaxy technique on spherical CdTe substrate with several different misoriented facets. They were characterized by means of micrograph, infrared absorption spectra, Raman scattering, and X-ray double-crystal diffraction. The results show that "near-facet" ( δ < 1°) and "terrace-free" (δ ≈ 1.2°) growth modes are superior in both the planarity and the amount of precipitates.
| Original language | English |
|---|---|
| Pages (from-to) | 1172-1173 |
| Number of pages | 2 |
| Journal | Wuli Xuebao/Acta Physica Sinica |
| Volume | 46 |
| Issue number | 6 |
| State | Published - 1997 |
| Externally published | Yes |