Characterization of GaN Schottky Barrier Diode for Multifinger Application

Ao Zhang; Jianjun Gao

doi:10.1109/LMWT.2025.3584366

Characterization of GaN Schottky Barrier Diode for Multifinger Application

Ao Zhang
, Jianjun Gao^*

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A compact scalable large signal model for GaN Schottky barrier diodes (SBDs) for multifinger application is proposed in this letter. The scaling rules for intrinsic model parameters between the diodes with different numbers of fingers are presented in detail. Both the series and shunt diode structures are used to verify the scaling rules. Excellent agreement is obtained between measured and simulated dc, S-parameters, and large signal performance for GaN Schottky diodes.

Original language	English
Pages (from-to)	1586-1589
Number of pages	4
Journal	IEEE Microwave and Wireless Technology Letters
Volume	35
Issue number	10
DOIs	https://doi.org/10.1109/LMWT.2025.3584366
State	Published - Oct 2025

Keywords

Equivalent circuit model
GaN
Schottky barrier diode (SBD)
parameter extraction

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10.1109/LMWT.2025.3584366

Cite this

@article{2932f587cd304acdb0fbc2d68dc480c8,

title = "Characterization of GaN Schottky Barrier Diode for Multifinger Application",

abstract = "A compact scalable large signal model for GaN Schottky barrier diodes (SBDs) for multifinger application is proposed in this letter. The scaling rules for intrinsic model parameters between the diodes with different numbers of fingers are presented in detail. Both the series and shunt diode structures are used to verify the scaling rules. Excellent agreement is obtained between measured and simulated dc, S-parameters, and large signal performance for GaN Schottky diodes.",

keywords = "Equivalent circuit model, GaN, Schottky barrier diode (SBD), parameter extraction",

author = "Ao Zhang and Jianjun Gao",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.",

year = "2025",

month = oct,

doi = "10.1109/LMWT.2025.3584366",

language = "英语",

volume = "35",

pages = "1586--1589",

journal = "IEEE Microwave and Wireless Technology Letters",

issn = "2771-957X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Characterization of GaN Schottky Barrier Diode for Multifinger Application

AU - Zhang, Ao

AU - Gao, Jianjun

PY - 2025/10

Y1 - 2025/10

N2 - A compact scalable large signal model for GaN Schottky barrier diodes (SBDs) for multifinger application is proposed in this letter. The scaling rules for intrinsic model parameters between the diodes with different numbers of fingers are presented in detail. Both the series and shunt diode structures are used to verify the scaling rules. Excellent agreement is obtained between measured and simulated dc, S-parameters, and large signal performance for GaN Schottky diodes.

AB - A compact scalable large signal model for GaN Schottky barrier diodes (SBDs) for multifinger application is proposed in this letter. The scaling rules for intrinsic model parameters between the diodes with different numbers of fingers are presented in detail. Both the series and shunt diode structures are used to verify the scaling rules. Excellent agreement is obtained between measured and simulated dc, S-parameters, and large signal performance for GaN Schottky diodes.

KW - Equivalent circuit model

KW - GaN

KW - Schottky barrier diode (SBD)

KW - parameter extraction

UR - https://www.scopus.com/pages/publications/105010708710

U2 - 10.1109/LMWT.2025.3584366

DO - 10.1109/LMWT.2025.3584366

M3 - 文章

AN - SCOPUS:105010708710

SN - 2771-957X

VL - 35

SP - 1586

EP - 1589

JO - IEEE Microwave and Wireless Technology Letters

JF - IEEE Microwave and Wireless Technology Letters

IS - 10

ER -

Characterization of GaN Schottky Barrier Diode for Multifinger Application

Abstract

Keywords

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