TY - GEN
T1 - Characterization and modeling of radiation damages via internal radiative efficiency in multi-junction solar cells
AU - Zhu, Lin
AU - Yoshita, Masahiro
AU - Nakamura, Tetsuya
AU - Imaizumi, Mitsuru
AU - Kim, Changsu
AU - Mochizuki, Toshimitsu
AU - Chen, Shaoqiang
AU - Kanemitsu, Yoshihiko
AU - Akiyama, Hidefumi
N1 - Publisher Copyright:
© 2016 SPIE.
PY - 2016
Y1 - 2016
N2 - In order to understand the radiation effects in space-used multi-junction solar cells, we characterized degradations of internal radiative efficiency (ηinti) in respective subcells in InGaP/GaAs double-junction solar cells after 1-MeV electron irradiations with different electrons fluences (Φ) via absolute electroluminescence (EL) measurements, because ηinti purely represents material-quality change due to radiation damage, independently from cell structures. We analyzed the degradation of ηinti under different Φ and found that the data of ηinti versus Φ in moderate and high Φ regions are very similar and almost independent of subcell materials, while the difference in beginning-of-life qualities of InGaP and GaAs materials causes dominant difference in sub-cell sensitivity to the low radiation damages. Finally, a simple model was proposed to explain the mechanism in degradation of ηinti, and also well explained the degradation behavior in open-circuit voltage for these multi-junction solar cells.
AB - In order to understand the radiation effects in space-used multi-junction solar cells, we characterized degradations of internal radiative efficiency (ηinti) in respective subcells in InGaP/GaAs double-junction solar cells after 1-MeV electron irradiations with different electrons fluences (Φ) via absolute electroluminescence (EL) measurements, because ηinti purely represents material-quality change due to radiation damage, independently from cell structures. We analyzed the degradation of ηinti under different Φ and found that the data of ηinti versus Φ in moderate and high Φ regions are very similar and almost independent of subcell materials, while the difference in beginning-of-life qualities of InGaP and GaAs materials causes dominant difference in sub-cell sensitivity to the low radiation damages. Finally, a simple model was proposed to explain the mechanism in degradation of ηinti, and also well explained the degradation behavior in open-circuit voltage for these multi-junction solar cells.
KW - Absolute electroluminescence
KW - III-V semiconductor materials
KW - Photovoltaic cells
KW - Radiation effects
KW - Space PV
UR - https://www.scopus.com/pages/publications/84982166241
U2 - 10.1117/12.2212827
DO - 10.1117/12.2212827
M3 - 会议稿件
AN - SCOPUS:84982166241
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V
A2 - Sugiyama, Masakazu
A2 - Freundlich, Alexandre
A2 - Lombez, Laurent
PB - SPIE
T2 - Physics, Simulation, and Photonic Engineering of Photovoltaic Devices V
Y2 - 15 February 2016 through 17 February 2016
ER -
