TY - JOUR
T1 - Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/BCl3 inductively coupled plasmas
AU - Zhang, Zhonghua
AU - Song, Sannian
AU - Song, Zhitang
AU - Cheng, Yan
AU - Peng, Cheng
AU - Zhang, Ling
AU - Cao, Duanchao
AU - Guo, Xiaohui
AU - Yin, Weijun
AU - Wu, Liangcai
AU - Liu, Bo
PY - 2014/3/1
Y1 - 2014/3/1
N2 - Inductively coupled plasmas etching of Al1.3Sb3Te (AST) films were studied using Cl2/BCl3 gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched AST shows accumulation of low volatile SbClx on the etched surface. Al shows the lowest halogenide during the etching process as the volatile chlorides compounds can easily be removed from the surface during the etching process.
AB - Inductively coupled plasmas etching of Al1.3Sb3Te (AST) films were studied using Cl2/BCl3 gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched AST shows accumulation of low volatile SbClx on the etched surface. Al shows the lowest halogenide during the etching process as the volatile chlorides compounds can easily be removed from the surface during the etching process.
KW - Etching
KW - Inductively coupled plasmas
KW - Phase change material
UR - https://www.scopus.com/pages/publications/84889679153
U2 - 10.1016/j.mee.2013.10.016
DO - 10.1016/j.mee.2013.10.016
M3 - 文章
AN - SCOPUS:84889679153
SN - 0167-9317
VL - 115
SP - 51
EP - 54
JO - Microelectronic Engineering
JF - Microelectronic Engineering
ER -