Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/BCl3 inductively coupled plasmas

Zhonghua Zhang; Sannian Song; Zhitang Song; Yan Cheng; Cheng Peng; Ling Zhang; Duanchao Cao; Xiaohui Guo; Weijun Yin; Liangcai Wu; Bo Liu

doi:10.1016/j.mee.2013.10.016

Characteristics and mechanism of Al_1.3Sb₃Te etched by Cl₂/BCl₃ inductively coupled plasmas

Zhonghua Zhang^*
, Sannian Song
, Zhitang Song
, Yan Cheng
, Cheng Peng
, Ling Zhang
, Duanchao Cao
, Xiaohui Guo
, Weijun Yin
, Liangcai Wu
, Bo Liu

^*Corresponding author for this work

CAS - Shanghai Institute of Microsystem and Information Technology
University of Chinese Academy of Sciences
Chinese Academy of Sciences

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Inductively coupled plasmas etching of Al_1.3Sb₃Te (AST) films were studied using Cl₂/BCl₃ gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched AST shows accumulation of low volatile SbCl_x on the etched surface. Al shows the lowest halogenide during the etching process as the volatile chlorides compounds can easily be removed from the surface during the etching process.

Original language	English
Pages (from-to)	51-54
Number of pages	4
Journal	Microelectronic Engineering
Volume	115
DOIs	https://doi.org/10.1016/j.mee.2013.10.016
State	Published - 1 Mar 2014
Externally published	Yes

Keywords

Etching
Inductively coupled plasmas
Phase change material

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10.1016/j.mee.2013.10.016

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title = "Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/BCl3 inductively coupled plasmas",

abstract = "Inductively coupled plasmas etching of Al1.3Sb3Te (AST) films were studied using Cl2/BCl3 gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched AST shows accumulation of low volatile SbClx on the etched surface. Al shows the lowest halogenide during the etching process as the volatile chlorides compounds can easily be removed from the surface during the etching process.",

keywords = "Etching, Inductively coupled plasmas, Phase change material",

author = "Zhonghua Zhang and Sannian Song and Zhitang Song and Yan Cheng and Cheng Peng and Ling Zhang and Duanchao Cao and Xiaohui Guo and Weijun Yin and Liangcai Wu and Bo Liu",

year = "2014",

month = mar,

day = "1",

doi = "10.1016/j.mee.2013.10.016",

language = "英语",

volume = "115",

pages = "51--54",

journal = "Microelectronic Engineering",

issn = "0167-9317",

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TY - JOUR

T1 - Characteristics and mechanism of Al1.3Sb3Te etched by Cl2/BCl3 inductively coupled plasmas

AU - Zhang, Zhonghua

AU - Song, Sannian

AU - Song, Zhitang

AU - Cheng, Yan

AU - Peng, Cheng

AU - Zhang, Ling

AU - Cao, Duanchao

AU - Guo, Xiaohui

AU - Yin, Weijun

AU - Wu, Liangcai

AU - Liu, Bo

PY - 2014/3/1

Y1 - 2014/3/1

N2 - Inductively coupled plasmas etching of Al1.3Sb3Te (AST) films were studied using Cl2/BCl3 gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched AST shows accumulation of low volatile SbClx on the etched surface. Al shows the lowest halogenide during the etching process as the volatile chlorides compounds can easily be removed from the surface during the etching process.

AB - Inductively coupled plasmas etching of Al1.3Sb3Te (AST) films were studied using Cl2/BCl3 gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched AST shows accumulation of low volatile SbClx on the etched surface. Al shows the lowest halogenide during the etching process as the volatile chlorides compounds can easily be removed from the surface during the etching process.

KW - Etching

KW - Inductively coupled plasmas

KW - Phase change material

UR - https://www.scopus.com/pages/publications/84889679153

U2 - 10.1016/j.mee.2013.10.016

DO - 10.1016/j.mee.2013.10.016

M3 - 文章

AN - SCOPUS:84889679153

SN - 0167-9317

VL - 115

SP - 51

EP - 54

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Characteristics and mechanism of Al_1.3Sb₃Te etched by Cl₂/BCl₃ inductively coupled plasmas

Abstract

Keywords

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