Characterisation of MBE grown II-VI semiconductor thin layers by X-ray interference

K. A. Prior; X. Tang; C. O'Donnell; C. Bradford; L. David; B. C. Cavenett

doi:10.1109/MBE.2002.1037925

Characterisation of MBE grown II-VI semiconductor thin layers by X-ray interference

K. A. Prior
, X. Tang
, C. O'Donnell
, C. Bradford
, L. David
, B. C. Cavenett

Heriot-Watt University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

X-ray interference (XRI) is a simple and powerful technique used to characterise thin layers buried within epitaxial films of GaAs/AlGaAs and InGaAs/GaAs. XRI measurements are double crystal rocking curves made on structures of the type A/B/C/B, where A is the substrate, B a different semiconductor and C the thin layer of interest, (possibly the same as A). B/C/B forms an X-ray interference film with the thicknesses of B much greater than that of C. Here, the Pendellosung fringes from B are strongly modulated by the introduction of C. XRI is also ideal for investigating materials which can not be grown thick enough for DEKTAK measurements, in which the lattice constant is not known accurately, or the layer is unstable in air and must be capped.

Original language	English
Title of host publication	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	393
Number of pages	1
ISBN (Electronic)	0780375815, 9780780375819
DOIs	https://doi.org/10.1109/MBE.2002.1037925
State	Published - 2002
Externally published	Yes
Event	12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States Duration: 15 Sep 2002 → 20 Sep 2002

Publication series

Name	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy

Conference

Conference	12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country/Territory	United States
City	San Francisco
Period	15/09/02 → 20/09/02

Access to Document

10.1109/MBE.2002.1037925

Cite this

Prior, K. A., Tang, X., O'Donnell, C., Bradford, C., David, L., & Cavenett, B. C. (2002). Characterisation of MBE grown II-VI semiconductor thin layers by X-ray interference. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 393). Article 1037925 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037925

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title = "Characterisation of MBE grown II-VI semiconductor thin layers by X-ray interference",

abstract = "X-ray interference (XRI) is a simple and powerful technique used to characterise thin layers buried within epitaxial films of GaAs/AlGaAs and InGaAs/GaAs. XRI measurements are double crystal rocking curves made on structures of the type A/B/C/B, where A is the substrate, B a different semiconductor and C the thin layer of interest, (possibly the same as A). B/C/B forms an X-ray interference film with the thicknesses of B much greater than that of C. Here, the Pendellosung fringes from B are strongly modulated by the introduction of C. XRI is also ideal for investigating materials which can not be grown thick enough for DEKTAK measurements, in which the lattice constant is not known accurately, or the layer is unstable in air and must be capped.",

author = "Prior, \{K. A.\} and X. Tang and C. O'Donnell and C. Bradford and L. David and Cavenett, \{B. C.\}",

note = "Publisher Copyright: {\textcopyright} 2002 IEEE.; 12th International Conference on Molecular Beam Epitaxy, MBE 2002 ; Conference date: 15-09-2002 Through 20-09-2002",

year = "2002",

doi = "10.1109/MBE.2002.1037925",

language = "英语",

series = "MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy",

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Prior, KA, Tang, X, O'Donnell, C, Bradford, C, David, L & Cavenett, BC 2002, Characterisation of MBE grown II-VI semiconductor thin layers by X-ray interference. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037925, MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy, Institute of Electrical and Electronics Engineers Inc., pp. 393, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 15/09/02. https://doi.org/10.1109/MBE.2002.1037925

Characterisation of MBE grown II-VI semiconductor thin layers by X-ray interference. / Prior, K. A.; Tang, X.; O'Donnell, C. et al.
MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 393 1037925 (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Bradford, C.

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AU - Cavenett, B. C.

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N2 - X-ray interference (XRI) is a simple and powerful technique used to characterise thin layers buried within epitaxial films of GaAs/AlGaAs and InGaAs/GaAs. XRI measurements are double crystal rocking curves made on structures of the type A/B/C/B, where A is the substrate, B a different semiconductor and C the thin layer of interest, (possibly the same as A). B/C/B forms an X-ray interference film with the thicknesses of B much greater than that of C. Here, the Pendellosung fringes from B are strongly modulated by the introduction of C. XRI is also ideal for investigating materials which can not be grown thick enough for DEKTAK measurements, in which the lattice constant is not known accurately, or the layer is unstable in air and must be capped.

AB - X-ray interference (XRI) is a simple and powerful technique used to characterise thin layers buried within epitaxial films of GaAs/AlGaAs and InGaAs/GaAs. XRI measurements are double crystal rocking curves made on structures of the type A/B/C/B, where A is the substrate, B a different semiconductor and C the thin layer of interest, (possibly the same as A). B/C/B forms an X-ray interference film with the thicknesses of B much greater than that of C. Here, the Pendellosung fringes from B are strongly modulated by the introduction of C. XRI is also ideal for investigating materials which can not be grown thick enough for DEKTAK measurements, in which the lattice constant is not known accurately, or the layer is unstable in air and must be capped.

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Prior KA, Tang X, O'Donnell C, Bradford C, David L, Cavenett BC. Characterisation of MBE grown II-VI semiconductor thin layers by X-ray interference. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc. 2002. p. 393. 1037925. (MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy). doi: 10.1109/MBE.2002.1037925

Characterisation of MBE grown II-VI semiconductor thin layers by X-ray interference

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