@inproceedings{f97d2c47acb248a0bd6add7c298f1965,
title = "Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence",
abstract = "For the first time, the on-state (Vgs >0, Vds> 0) time-dependent dielectric breakdown (TDDB) in FinFET technology is systematically studied. The assumption that the kinetics of soft breakdown (SBD) would remain the same and have no effect on electromigration (EM) is not true using advanced physical characterization techniques (TEM/EDX/EELS), as well as electrical-statistical tests and multiphysics simulations. By catching the missing EM consequence in SBD, the impacts of self-heating and an EM-aware layout topology is studied. Our study provide solid evidence of the SBD-induced EM, which is vital for the accurate prediction and boosting circuit reliability of advanced FinFETs and other multiple-gate device technology.",
keywords = "CMOS, EM, MOL, TEM, self-heating",
author = "Zuoyuan Dong and Zixuan Sun and Xin Yang and Xiaomei Li and Yongkang Xue and Chen Luo and Puyang Cai and Zirui Wang and Shuying Wang and Yewei Zhang and Chaolun Wang and Pengpeng Ren and Zhigang Ji and Xing Wu and Runsheng Wang and Ru Huang",
note = "Publisher Copyright: {\textcopyright} 2023 JSAP.; 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023 ; Conference date: 11-06-2023 Through 16-06-2023",
year = "2023",
doi = "10.23919/VLSITechnologyandCir57934.2023.10185380",
language = "英语",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023",
address = "美国",
}