Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature

Z. J. Shang; X. H. Zheng; C. Yang; Y. Chen; B. Li; L. Sun; Z. Tang; D. G. Zhao

doi:10.1063/1.4903743

Carrier thermalization under stimulated emission in In_0.17Ga_0.83N epilayer at room temperature

Z. J. Shang
, X. H. Zheng^*
, C. Yang
, Y. Chen
, B. Li
, L. Sun
, Z. Tang
, D. G. Zhao

^*Corresponding author for this work

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We elucidate a strong room temperature stimulated emission (SE) of In_0.17Ga_0.83N epilayer grown by molecular beam epitaxy under the subpicosecond pulse excitation. The SE peak at 428 nm emerges on the higher energy side of the spontaneous emission in photoluminescence spectra when the excitation density exceeds the threshold of ∼3.68 mJ/cm². Nondegenerate transient differential reflectivity measurements show that a multi-stage carrier thermalization from excited states to localized edge states and stimulated emission dominate the decay processes of photogenerated carriers under various excitation densities. Our results indicate that the existence of phonon bottleneck effect could result in a slow thermalization process in the InGaN material even under the condition of stimulated emission.

Original language	English
Article number	232104
Journal	Applied Physics Letters
Volume	105
Issue number	23
DOIs	https://doi.org/10.1063/1.4903743
State	Published - 8 Dec 2014

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@article{4289185e2be044ada3170b2b978de129,

title = "Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature",

abstract = "We elucidate a strong room temperature stimulated emission (SE) of In0.17Ga0.83N epilayer grown by molecular beam epitaxy under the subpicosecond pulse excitation. The SE peak at 428 nm emerges on the higher energy side of the spontaneous emission in photoluminescence spectra when the excitation density exceeds the threshold of ∼3.68 mJ/cm2. Nondegenerate transient differential reflectivity measurements show that a multi-stage carrier thermalization from excited states to localized edge states and stimulated emission dominate the decay processes of photogenerated carriers under various excitation densities. Our results indicate that the existence of phonon bottleneck effect could result in a slow thermalization process in the InGaN material even under the condition of stimulated emission.",

author = "Shang, \{Z. J.\} and Zheng, \{X. H.\} and C. Yang and Y. Chen and B. Li and L. Sun and Z. Tang and Zhao, \{D. G.\}",

note = "Publisher Copyright: {\textcopyright} 2014 AIP Publishing LLC.",

year = "2014",

month = dec,

day = "8",

doi = "10.1063/1.4903743",

language = "英语",

volume = "105",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Carrier thermalization under stimulated emission in In0.17Ga0.83N epilayer at room temperature

AU - Shang, Z. J.

AU - Zheng, X. H.

AU - Yang, C.

AU - Chen, Y.

AU - Li, B.

AU - Sun, L.

AU - Tang, Z.

AU - Zhao, D. G.

PY - 2014/12/8

Y1 - 2014/12/8

N2 - We elucidate a strong room temperature stimulated emission (SE) of In0.17Ga0.83N epilayer grown by molecular beam epitaxy under the subpicosecond pulse excitation. The SE peak at 428 nm emerges on the higher energy side of the spontaneous emission in photoluminescence spectra when the excitation density exceeds the threshold of ∼3.68 mJ/cm2. Nondegenerate transient differential reflectivity measurements show that a multi-stage carrier thermalization from excited states to localized edge states and stimulated emission dominate the decay processes of photogenerated carriers under various excitation densities. Our results indicate that the existence of phonon bottleneck effect could result in a slow thermalization process in the InGaN material even under the condition of stimulated emission.

AB - We elucidate a strong room temperature stimulated emission (SE) of In0.17Ga0.83N epilayer grown by molecular beam epitaxy under the subpicosecond pulse excitation. The SE peak at 428 nm emerges on the higher energy side of the spontaneous emission in photoluminescence spectra when the excitation density exceeds the threshold of ∼3.68 mJ/cm2. Nondegenerate transient differential reflectivity measurements show that a multi-stage carrier thermalization from excited states to localized edge states and stimulated emission dominate the decay processes of photogenerated carriers under various excitation densities. Our results indicate that the existence of phonon bottleneck effect could result in a slow thermalization process in the InGaN material even under the condition of stimulated emission.

UR - https://www.scopus.com/pages/publications/84915816952

U2 - 10.1063/1.4903743

DO - 10.1063/1.4903743

M3 - 文章

AN - SCOPUS:84915816952

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232104

ER -

Carrier thermalization under stimulated emission in In_0.17Ga_0.83N epilayer at room temperature

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