Capacitance-voltage characteristics of Bi₄Ti₃O₁₂/p-Si interface

Electrical properties of the interface between Bi₄Ti₃O₁₂ ferroelectric film and p-Si substrate have been studied by capacitance-voltage (C-V) characteristics. It is found that the interface barrier can be broken down temporally because of the charge injection from Si substrate into the ferroelectric thin film, and this charge injection behavior induces hump and valley structures in the C-V curves. It is also found that the polarization in the Bi₄Ti₃O₁₂ film is aligned along a preferential direction from semiconductor to ferroelectric thin film, which is attributed to the ferroelectric/p-Si contact.