C-V characteristics of Bi2Ti2O7 thin films on n-Si(100)

  • Shao Wei Wang*
  • , Wei Lu
  • , Hong Wang
  • , Dong Wang
  • , Min Wang
  • , Xue Chu Shen
  • *Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We report the growth of Bi2Ti2O7 thin films on n-type Si substrates by the chemical solution decomposition technique. Both the X-ray double-crystal diffraction and atomic force micro-spectroscopy measurements are used to check the film properties. It is shown that the film is a multi-crystal film dominated by the Bi2Ti2O7 phase. The C-V measurements are also performed on Au/ Bi2Ti2O7/n-Si(100) MOS structure. It is revealed that both the fixed and mobile negative charges are contained in the film. The mobile negative charge results in the hysteresis loops on C-V curve.

Original languageEnglish
Pages (from-to)2464-2465
Number of pages2
JournalWuli Xuebao/Acta Physica Sinica
Volume50
Issue number12
StatePublished - Dec 2001
Externally publishedYes

Keywords

  • BiTiO thin films
  • C-V characteristics
  • Charge's move

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