C-axis oriented AIN thin films on silicon prepared by ultrahigh vacuum evaporation of Al combined with post-nitridation

Ji Po Huang; Lian Wei Wang; Qin Wo Shen; Jian Xia Cao; Ru Shan Ni; Cheng Lu Lin

doi:10.1088/0256-307X/15/10/012

C-axis oriented AIN thin films on silicon prepared by ultrahigh vacuum evaporation of Al combined with post-nitridation

Ji Po Huang
, Lian Wei Wang
, Qin Wo Shen
, Jian Xia Cao
, Ru Shan Ni
, Cheng Lu Lin

CAS - Shanghai Institute of Microsystem and Information Technology

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A new techiniquc for the preparation of AIN thin films by ultrahigh vacuum electron beam evaporation of Al followed by nitridation is reported and by using this method c-axis oriented A1N thin films have been successfully grown on Si(111) substrates. X-ray diffraction, Fourier transform infrared spectroscopy, x-ray photoelection spectroscopy and cross-sectional transmission electron microscope were employed to characterize A1N films. Temperature of nitridation was found to play an important role in the formation of A1N film. By post-nitridation of as-deposited film at 1000°C for 1h in N₂, the crystallinc A1N film with (002) orientation has been obtained.

Original language	English
Pages (from-to)	732-733
Number of pages	2
Journal	Chinese Physics Letters
Volume	15
Issue number	10
DOIs	https://doi.org/10.1088/0256-307X/15/10/012
State	Published - 1998
Externally published	Yes

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10.1088/0256-307X/15/10/012

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@article{ed62e0845e5e4da7b0509387765071d5,

title = "C-axis oriented AIN thin films on silicon prepared by ultrahigh vacuum evaporation of Al combined with post-nitridation",

abstract = "A new techiniquc for the preparation of AIN thin films by ultrahigh vacuum electron beam evaporation of Al followed by nitridation is reported and by using this method c-axis oriented A1N thin films have been successfully grown on Si(111) substrates. X-ray diffraction, Fourier transform infrared spectroscopy, x-ray photoelection spectroscopy and cross-sectional transmission electron microscope were employed to characterize A1N films. Temperature of nitridation was found to play an important role in the formation of A1N film. By post-nitridation of as-deposited film at 1000°C for 1h in N2, the crystallinc A1N film with (002) orientation has been obtained.",

author = "Huang, \{Ji Po\} and Wang, \{Lian Wei\} and Shen, \{Qin Wo\} and Cao, \{Jian Xia\} and Ni, \{Ru Shan\} and Lin, \{Cheng Lu\}",

year = "1998",

doi = "10.1088/0256-307X/15/10/012",

language = "英语",

volume = "15",

pages = "732--733",

journal = "Chinese Physics Letters",

issn = "0256-307X",

publisher = "IOP Publishing Ltd.",

number = "10",

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TY - JOUR

T1 - C-axis oriented AIN thin films on silicon prepared by ultrahigh vacuum evaporation of Al combined with post-nitridation

AU - Huang, Ji Po

AU - Wang, Lian Wei

AU - Shen, Qin Wo

AU - Cao, Jian Xia

AU - Ni, Ru Shan

AU - Lin, Cheng Lu

PY - 1998

Y1 - 1998

N2 - A new techiniquc for the preparation of AIN thin films by ultrahigh vacuum electron beam evaporation of Al followed by nitridation is reported and by using this method c-axis oriented A1N thin films have been successfully grown on Si(111) substrates. X-ray diffraction, Fourier transform infrared spectroscopy, x-ray photoelection spectroscopy and cross-sectional transmission electron microscope were employed to characterize A1N films. Temperature of nitridation was found to play an important role in the formation of A1N film. By post-nitridation of as-deposited film at 1000°C for 1h in N2, the crystallinc A1N film with (002) orientation has been obtained.

AB - A new techiniquc for the preparation of AIN thin films by ultrahigh vacuum electron beam evaporation of Al followed by nitridation is reported and by using this method c-axis oriented A1N thin films have been successfully grown on Si(111) substrates. X-ray diffraction, Fourier transform infrared spectroscopy, x-ray photoelection spectroscopy and cross-sectional transmission electron microscope were employed to characterize A1N films. Temperature of nitridation was found to play an important role in the formation of A1N film. By post-nitridation of as-deposited film at 1000°C for 1h in N2, the crystallinc A1N film with (002) orientation has been obtained.

UR - https://www.scopus.com/pages/publications/0032352177

U2 - 10.1088/0256-307X/15/10/012

DO - 10.1088/0256-307X/15/10/012

M3 - 文章

AN - SCOPUS:0032352177

SN - 0256-307X

VL - 15

SP - 732

EP - 733

JO - Chinese Physics Letters

JF - Chinese Physics Letters

IS - 10

ER -

C-axis oriented AIN thin films on silicon prepared by ultrahigh vacuum evaporation of Al combined with post-nitridation

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