Burstein-moss effect in hg_1-xcd_xte

The Burstein-Moss effect is observed for thin samples of Hg_1-x.Cd_xTe with x = 0.165 d = 10um, x = 0.170, d = 9um and x = 0.194, d = 24pm, and for one In-doped degenerate sample x = 0.190, n = 7 x 10^l7cm^-3. The optical energy gap obtained from measurements of the intrinsic absorption spectra agrees well with the calculated Fermi level. When the Fermi level enters into the conduction band it causes a shift of the intrinsic absorption edge of the semiconductor to a higher photon energy. This is known as the Burstein-Moss effect [1, 2], and has been investigated widely. However, for the Hg,_1-xCd_xTe system there is only limited data in the literature. In this article we report the observation of the BM effect in several Hg,_1-xCd_xTe samples with compositions. v = 0.165, 0.170, 0.194 and in an In-doped degenerate Hg,_1-xCd_xTe sample with x = 0.190, n = 7 x 10¹⁷cm^-3.