Bulk photovoltaic effect at infrared wavelength in strained Bi2Te3 films

Yucong Liu; Jiadong Chen; Chao Wang; Huiyong Deng; Da Ming Zhu; Gujin Hu; Xiaoshuang Chen; Ning Dai

doi:10.1063/1.4971798

Bulk photovoltaic effect at infrared wavelength in strained Bi₂Te₃ films

Yucong Liu
, Jiadong Chen
, Chao Wang
, Huiyong Deng^*
, Da Ming Zhu
, Gujin Hu
, Xiaoshuang Chen
, Ning Dai

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics
University of Chinese Academy of Sciences
Changzhou Institute of Optoelectronic Technology
University of Missouri at Kansas City
Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

As a prominent three-dimensional (3-D) topological insulator, traditional thermoelectric material Bi₂Te₃ has re-attracted greater interest in recent years. Herein, we demonstrate for the first time that c-axis oriented strained Bi₂Te₃ films exhibit the bulk photovoltaic effect (BPVE) at infrared wavelengths, which was only found in wide band-gap ferroelectric materials before. Moreover, further experiments show that the bulk photovoltaic effect probably comes from the flexoelectric effect which was induced by the stress gradient in strained Bi₂Te₃ films. And we anticipate that the results are generalizable to other layer-structured or two-dimensional (2-D) materials, e.g., Bi₂Se₃ and MoS₂.

Original language	English
Article number	126104
Journal	APL Materials
Volume	4
Issue number	12
DOIs	https://doi.org/10.1063/1.4971798
State	Published - 1 Dec 2016
Externally published	Yes

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title = "Bulk photovoltaic effect at infrared wavelength in strained Bi2Te3 films",

abstract = "As a prominent three-dimensional (3-D) topological insulator, traditional thermoelectric material Bi2Te3 has re-attracted greater interest in recent years. Herein, we demonstrate for the first time that c-axis oriented strained Bi2Te3 films exhibit the bulk photovoltaic effect (BPVE) at infrared wavelengths, which was only found in wide band-gap ferroelectric materials before. Moreover, further experiments show that the bulk photovoltaic effect probably comes from the flexoelectric effect which was induced by the stress gradient in strained Bi2Te3 films. And we anticipate that the results are generalizable to other layer-structured or two-dimensional (2-D) materials, e.g., Bi2Se3 and MoS2.",

author = "Yucong Liu and Jiadong Chen and Chao Wang and Huiyong Deng and Zhu, \{Da Ming\} and Gujin Hu and Xiaoshuang Chen and Ning Dai",

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T1 - Bulk photovoltaic effect at infrared wavelength in strained Bi2Te3 films

AU - Liu, Yucong

AU - Chen, Jiadong

AU - Wang, Chao

AU - Deng, Huiyong

AU - Zhu, Da Ming

AU - Hu, Gujin

AU - Chen, Xiaoshuang

AU - Dai, Ning

PY - 2016/12/1

Y1 - 2016/12/1

N2 - As a prominent three-dimensional (3-D) topological insulator, traditional thermoelectric material Bi2Te3 has re-attracted greater interest in recent years. Herein, we demonstrate for the first time that c-axis oriented strained Bi2Te3 films exhibit the bulk photovoltaic effect (BPVE) at infrared wavelengths, which was only found in wide band-gap ferroelectric materials before. Moreover, further experiments show that the bulk photovoltaic effect probably comes from the flexoelectric effect which was induced by the stress gradient in strained Bi2Te3 films. And we anticipate that the results are generalizable to other layer-structured or two-dimensional (2-D) materials, e.g., Bi2Se3 and MoS2.

AB - As a prominent three-dimensional (3-D) topological insulator, traditional thermoelectric material Bi2Te3 has re-attracted greater interest in recent years. Herein, we demonstrate for the first time that c-axis oriented strained Bi2Te3 films exhibit the bulk photovoltaic effect (BPVE) at infrared wavelengths, which was only found in wide band-gap ferroelectric materials before. Moreover, further experiments show that the bulk photovoltaic effect probably comes from the flexoelectric effect which was induced by the stress gradient in strained Bi2Te3 films. And we anticipate that the results are generalizable to other layer-structured or two-dimensional (2-D) materials, e.g., Bi2Se3 and MoS2.

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U2 - 10.1063/1.4971798

DO - 10.1063/1.4971798

M3 - 文章

AN - SCOPUS:85007000711

SN - 2166-532X

VL - 4

JO - APL Materials

JF - APL Materials

IS - 12

M1 - 126104

ER -

Bulk photovoltaic effect at infrared wavelength in strained Bi₂Te₃ films

Abstract

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