Brondband near-infrared emission in transparent Ni2+-doped γ-(Ga, Al)2O3 glass ceramics

Botao Wu; Jianrong Qiu; E. Wu; Heping Zeng

doi:10.1109/AOM.2010.5713547

Brondband near-infrared emission in transparent Ni²⁺-doped γ-(Ga, Al)₂O₃ glass ceramics

Botao Wu^*
, Jianrong Qiu
, E. Wu
, Heping Zeng

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Transparent glass ceramics embedding Ni²⁺-doped γ-(Ga, Al)₂O₃ nanocrystals were prepared and the optical properties of Ni²⁺-doped glass ceramics were investigated. The glass ceramics showed a broadband near-infrared emission centering at about 1210 nm with full width at half maximum of more than 220 nm and long fluorescent lifetime. The change of optical signal at the 1300 nm telecommunication band with and without 980 nm excitation was also presented when the seed beam passed through the bulk glass ceramics.

Original language	English
Title of host publication	2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010
DOIs	https://doi.org/10.1109/AOM.2010.5713547
State	Published - 2010
Externally published	Yes
Event	2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010 - Guangzhou, China Duration: 3 Dec 2010 → 6 Dec 2010

Publication series

Name	2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010

Conference

Conference	2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010
Country/Territory	China
City	Guangzhou
Period	3/12/10 → 6/12/10

Keywords

Broadband emission
Ni
Optical amplification
Transparent galss ceramics

Access to Document

10.1109/AOM.2010.5713547

Cite this

@inproceedings{07b3bbe9963b4138bbd84d5f36261bda,

title = "Brondband near-infrared emission in transparent Ni2+-doped γ-(Ga, Al)2O3 glass ceramics",

abstract = "Transparent glass ceramics embedding Ni2+-doped γ-(Ga, Al)2O3 nanocrystals were prepared and the optical properties of Ni2+-doped glass ceramics were investigated. The glass ceramics showed a broadband near-infrared emission centering at about 1210 nm with full width at half maximum of more than 220 nm and long fluorescent lifetime. The change of optical signal at the 1300 nm telecommunication band with and without 980 nm excitation was also presented when the seed beam passed through the bulk glass ceramics.",

keywords = "Broadband emission, Ni, Optical amplification, Transparent galss ceramics",

author = "Botao Wu and Jianrong Qiu and E. Wu and Heping Zeng",

year = "2010",

doi = "10.1109/AOM.2010.5713547",

language = "英语",

isbn = "9781424483938",

series = "2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010",

booktitle = "2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010",

note = "2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010 ; Conference date: 03-12-2010 Through 06-12-2010",

}

Wu, B, Qiu, J, Wu, E & Zeng, H 2010, Brondband near-infrared emission in transparent Ni²⁺-doped γ-(Ga, Al)₂O₃ glass ceramics. in 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010., 5713547, 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010, 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010, Guangzhou, China, 3/12/10. https://doi.org/10.1109/AOM.2010.5713547

Brondband near-infrared emission in transparent Ni²⁺-doped γ-(Ga, Al)₂O₃ glass ceramics. / Wu, Botao; Qiu, Jianrong; Wu, E. et al.
2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010. 2010. 5713547 (2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Brondband near-infrared emission in transparent Ni2+-doped γ-(Ga, Al)2O3 glass ceramics

AU - Wu, Botao

AU - Qiu, Jianrong

AU - Wu, E.

AU - Zeng, Heping

PY - 2010

Y1 - 2010

N2 - Transparent glass ceramics embedding Ni2+-doped γ-(Ga, Al)2O3 nanocrystals were prepared and the optical properties of Ni2+-doped glass ceramics were investigated. The glass ceramics showed a broadband near-infrared emission centering at about 1210 nm with full width at half maximum of more than 220 nm and long fluorescent lifetime. The change of optical signal at the 1300 nm telecommunication band with and without 980 nm excitation was also presented when the seed beam passed through the bulk glass ceramics.

AB - Transparent glass ceramics embedding Ni2+-doped γ-(Ga, Al)2O3 nanocrystals were prepared and the optical properties of Ni2+-doped glass ceramics were investigated. The glass ceramics showed a broadband near-infrared emission centering at about 1210 nm with full width at half maximum of more than 220 nm and long fluorescent lifetime. The change of optical signal at the 1300 nm telecommunication band with and without 980 nm excitation was also presented when the seed beam passed through the bulk glass ceramics.

KW - Broadband emission

KW - Ni

KW - Optical amplification

KW - Transparent galss ceramics

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DO - 10.1109/AOM.2010.5713547

M3 - 会议稿件

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SN - 9781424483938

T3 - 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010

BT - 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010

T2 - 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics, AOM 2010

Y2 - 3 December 2010 through 6 December 2010

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