Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga2S3 nanocrystals

Jing Ren; Bo Li; Guang Yang; Weina Xu; Zhihuan Zhang; Mihail Secu; Vasile Bercu; Huidan Zeng; Guorong Chen

doi:10.1364/OL.37.005043

Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga₂S₃ nanocrystals

Jing Ren, Bo Li, Guang Yang, Weina Xu, Zhihuan Zhang, Mihail Secu, Vasile Bercu, Huidan Zeng, Guorong Chen

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Upon 808 nm excitation, an intense broadband near-infrared emission from Cr⁴⁺ has been observed in 80GeS₂-20Ga₂S ₃ chalcogenide glass-ceramics (GCs) containing Ga₂S ₃ nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000-1500 nm). The formation of Ga₂S₃ nanocrystals (∼20 nm) increases the emission intensity of Cr⁴⁺ by more than three times. The quantum efficiency of the present GCs is as great as 36% at room temperature.

Original language	English
Pages (from-to)	5043-5045
Number of pages	3
Journal	Optics Letters
Volume	37
Issue number	24
DOIs	https://doi.org/10.1364/OL.37.005043
State	Published - 15 Dec 2012

Access to Document

10.1364/OL.37.005043

Cite this

@article{644421ff60fb4bcfa0eeade8d54f7853,

title = "Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga2S3 nanocrystals",

abstract = "Upon 808 nm excitation, an intense broadband near-infrared emission from Cr4+ has been observed in 80GeS2-20Ga2S 3 chalcogenide glass-ceramics (GCs) containing Ga2S 3 nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000-1500 nm). The formation of Ga2S3 nanocrystals (∼20 nm) increases the emission intensity of Cr4+ by more than three times. The quantum efficiency of the present GCs is as great as 36\% at room temperature.",

author = "Jing Ren and Bo Li and Guang Yang and Weina Xu and Zhihuan Zhang and Mihail Secu and Vasile Bercu and Huidan Zeng and Guorong Chen",

year = "2012",

month = dec,

day = "15",

doi = "10.1364/OL.37.005043",

language = "英语",

volume = "37",

pages = "5043--5045",

journal = "Optics Letters",

issn = "0146-9592",

publisher = "Optica Publishing Group (formerly OSA)",

number = "24",

}

TY - JOUR

T1 - Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga2S3 nanocrystals

AU - Ren, Jing

AU - Li, Bo

AU - Yang, Guang

AU - Xu, Weina

AU - Zhang, Zhihuan

AU - Secu, Mihail

AU - Bercu, Vasile

AU - Zeng, Huidan

AU - Chen, Guorong

PY - 2012/12/15

Y1 - 2012/12/15

N2 - Upon 808 nm excitation, an intense broadband near-infrared emission from Cr4+ has been observed in 80GeS2-20Ga2S 3 chalcogenide glass-ceramics (GCs) containing Ga2S 3 nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000-1500 nm). The formation of Ga2S3 nanocrystals (∼20 nm) increases the emission intensity of Cr4+ by more than three times. The quantum efficiency of the present GCs is as great as 36% at room temperature.

AB - Upon 808 nm excitation, an intense broadband near-infrared emission from Cr4+ has been observed in 80GeS2-20Ga2S 3 chalcogenide glass-ceramics (GCs) containing Ga2S 3 nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000-1500 nm). The formation of Ga2S3 nanocrystals (∼20 nm) increases the emission intensity of Cr4+ by more than three times. The quantum efficiency of the present GCs is as great as 36% at room temperature.

UR - https://www.scopus.com/pages/publications/84871309549

U2 - 10.1364/OL.37.005043

DO - 10.1364/OL.37.005043

M3 - 文章

AN - SCOPUS:84871309549

SN - 0146-9592

VL - 37

SP - 5043

EP - 5045

JO - Optics Letters

JF - Optics Letters

IS - 24

ER -

Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga₂S₃ nanocrystals

Abstract

Access to Document

Other files and links

Fingerprint

Cite this