Bright room temperature near-infrared single-photon emission from single point defects in the AlGaN film

Yingxian Xue; Feiliang Chen; Zhiyun Fang; Shiyu Zhang; Qian Li; Mo Li; Jianbin Kang; Jian Zhang; Si Shen; Botao Wu; E. Wu

doi:10.1063/5.0045506

Bright room temperature near-infrared single-photon emission from single point defects in the AlGaN film

Yingxian Xue
, Feiliang Chen
, Zhiyun Fang
, Shiyu Zhang
, Qian Li
, Mo Li
, Jianbin Kang
, Jian Zhang
, Si Shen
, Botao Wu
, E. Wu

Institute for Advanced Study in Precision Spectroscopy

East China Normal University
China Academy of Engineering Physics
University of Electronic Science and Technology of China
Shanxi University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Near-infrared (NIR) single-photon source plays a key role in a wide range of applications in quantum technology. In particular, in quantum communication, the NIR wavelength operation perfectly matches the relatively low-attenuation transmission window of the optical fiber, which attracts more and more research interest. Here, we report the room temperature single-photon emission from single point defects in the aluminum gallium nitride (AlGaN) film. The obtained single-photon emission covers from 720 to 930 nm and exhibits highly linear polarization and high photon brightness. This may provide a platform for future integrated on-chip quantum photonic devices.

Original language	English
Article number	131103
Journal	Applied Physics Letters
Volume	118
Issue number	13
DOIs	https://doi.org/10.1063/5.0045506
State	Published - 29 Mar 2021

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10.1063/5.0045506

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title = "Bright room temperature near-infrared single-photon emission from single point defects in the AlGaN film",

abstract = "Near-infrared (NIR) single-photon source plays a key role in a wide range of applications in quantum technology. In particular, in quantum communication, the NIR wavelength operation perfectly matches the relatively low-attenuation transmission window of the optical fiber, which attracts more and more research interest. Here, we report the room temperature single-photon emission from single point defects in the aluminum gallium nitride (AlGaN) film. The obtained single-photon emission covers from 720 to 930 nm and exhibits highly linear polarization and high photon brightness. This may provide a platform for future integrated on-chip quantum photonic devices.",

author = "Yingxian Xue and Feiliang Chen and Zhiyun Fang and Shiyu Zhang and Qian Li and Mo Li and Jianbin Kang and Jian Zhang and Si Shen and Botao Wu and E. Wu",

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doi = "10.1063/5.0045506",

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T1 - Bright room temperature near-infrared single-photon emission from single point defects in the AlGaN film

AU - Xue, Yingxian

AU - Chen, Feiliang

AU - Fang, Zhiyun

AU - Zhang, Shiyu

AU - Li, Qian

AU - Li, Mo

AU - Kang, Jianbin

AU - Zhang, Jian

AU - Shen, Si

AU - Wu, Botao

AU - Wu, E.

PY - 2021/3/29

Y1 - 2021/3/29

N2 - Near-infrared (NIR) single-photon source plays a key role in a wide range of applications in quantum technology. In particular, in quantum communication, the NIR wavelength operation perfectly matches the relatively low-attenuation transmission window of the optical fiber, which attracts more and more research interest. Here, we report the room temperature single-photon emission from single point defects in the aluminum gallium nitride (AlGaN) film. The obtained single-photon emission covers from 720 to 930 nm and exhibits highly linear polarization and high photon brightness. This may provide a platform for future integrated on-chip quantum photonic devices.

AB - Near-infrared (NIR) single-photon source plays a key role in a wide range of applications in quantum technology. In particular, in quantum communication, the NIR wavelength operation perfectly matches the relatively low-attenuation transmission window of the optical fiber, which attracts more and more research interest. Here, we report the room temperature single-photon emission from single point defects in the aluminum gallium nitride (AlGaN) film. The obtained single-photon emission covers from 720 to 930 nm and exhibits highly linear polarization and high photon brightness. This may provide a platform for future integrated on-chip quantum photonic devices.

UR - https://www.scopus.com/pages/publications/85103449859

U2 - 10.1063/5.0045506

DO - 10.1063/5.0045506

M3 - 文章

AN - SCOPUS:85103449859

SN - 0003-6951

VL - 118

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 131103

ER -

Bright room temperature near-infrared single-photon emission from single point defects in the AlGaN film

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