@inproceedings{7627b48a887e448d968ee24e47fc5378,
title = "Breakthroughs in Undoped HfO2 Ferroelectric Capacitors Achieved through Enhanced Nanocrystallite Seeding in As-Deposited Films via O2-Plasma ALD",
abstract = "In this work, undoped HfO2 ferroelectric capacitors with excellent material properties are fabricated by O2plasma atomic layer deposition (ALD). Record high ferroelectric performance is demonstrated among all reported undoped HfO2 results, with high endurance (> 1011) and short switching time (< 2 ns). An average large single-crystal size (> 50 nm) and an orthorhombic phase ratio of over 40\% are confirmed by transmission electron microscopy (TEM). Furthermore, the impacts of oxygen vacancy (VO) and H impurities concentration on the ferroelectric properties are elucidated.",
keywords = "seed crystallite, ultra-fast speeds, undoped HfO",
author = "Zongwei Shang and Changqing Ye and Hao Li and Xing Wu and Runsheng Wang and Ming Li and Ru Huang",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025 ; Conference date: 09-03-2025 Through 12-03-2025",
year = "2025",
doi = "10.1109/EDTM61175.2025.11040957",
language = "英语",
series = "9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "9th IEEE Electron Devices Technology and Manufacturing Conference",
address = "美国",
}