Bonding to antibonding transition for hole ground states in coupled InAs quantum wires

Jiqing Wang; Deshuang Shang; Huibing Mao; Jianguo Yu; Qiang Zhao; Pingxiong Yang; Huaizhong Xing

doi:10.1016/j.ssc.2012.11.023

Bonding to antibonding transition for hole ground states in coupled InAs quantum wires

Jiqing Wang^*
, Deshuang Shang
, Huibing Mao
, Jianguo Yu
, Qiang Zhao
, Pingxiong Yang
, Huaizhong Xing

^*Corresponding author for this work

East China Normal University
Donghua University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We calculate hole energies of the bonding and antibonding states in coupled quantum wires using 6-band kp model. It is shown that hole ground state changes character from a bonding to an antibonding orbital with increasing inter-wire distances. This effect is a consequence of the enhancement of light hole contribution to the ground state. The variations of g factors under external electric and magnetic fields demonstrate the antibonding character of hole ground states.

Original language	English
Pages (from-to)	41-44
Number of pages	4
Journal	Solid State Communications
Volume	156
DOIs	https://doi.org/10.1016/j.ssc.2012.11.023
State	Published - Mar 2013
Externally published	Yes

Keywords

A. InAs
A. Quantum wire
D. Hole
D. g Factor

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10.1016/j.ssc.2012.11.023

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title = "Bonding to antibonding transition for hole ground states in coupled InAs quantum wires",

abstract = "We calculate hole energies of the bonding and antibonding states in coupled quantum wires using 6-band kp model. It is shown that hole ground state changes character from a bonding to an antibonding orbital with increasing inter-wire distances. This effect is a consequence of the enhancement of light hole contribution to the ground state. The variations of g factors under external electric and magnetic fields demonstrate the antibonding character of hole ground states.",

keywords = "A. InAs, A. Quantum wire, D. Hole, D. g Factor",

author = "Jiqing Wang and Deshuang Shang and Huibing Mao and Jianguo Yu and Qiang Zhao and Pingxiong Yang and Huaizhong Xing",

year = "2013",

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doi = "10.1016/j.ssc.2012.11.023",

language = "英语",

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pages = "41--44",

journal = "Solid State Communications",

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AU - Wang, Jiqing

AU - Shang, Deshuang

AU - Mao, Huibing

AU - Yu, Jianguo

AU - Zhao, Qiang

AU - Yang, Pingxiong

AU - Xing, Huaizhong

PY - 2013/3

Y1 - 2013/3

N2 - We calculate hole energies of the bonding and antibonding states in coupled quantum wires using 6-band kp model. It is shown that hole ground state changes character from a bonding to an antibonding orbital with increasing inter-wire distances. This effect is a consequence of the enhancement of light hole contribution to the ground state. The variations of g factors under external electric and magnetic fields demonstrate the antibonding character of hole ground states.

AB - We calculate hole energies of the bonding and antibonding states in coupled quantum wires using 6-band kp model. It is shown that hole ground state changes character from a bonding to an antibonding orbital with increasing inter-wire distances. This effect is a consequence of the enhancement of light hole contribution to the ground state. The variations of g factors under external electric and magnetic fields demonstrate the antibonding character of hole ground states.

KW - A. InAs

KW - A. Quantum wire

KW - D. Hole

KW - D. g Factor

UR - https://www.scopus.com/pages/publications/84873580316

U2 - 10.1016/j.ssc.2012.11.023

DO - 10.1016/j.ssc.2012.11.023

M3 - 文章

AN - SCOPUS:84873580316

SN - 0038-1098

VL - 156

SP - 41

EP - 44

JO - Solid State Communications

JF - Solid State Communications

ER -

Bonding to antibonding transition for hole ground states in coupled InAs quantum wires

Abstract

Keywords

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