Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

  • Meng Peng
  • , Runzhang Xie
  • , Zhen Wang
  • , Peng Wang
  • , Fang Wang
  • , Haonan Ge
  • , Yang Wang
  • , Fang Zhong
  • , Peisong Wu
  • , Jiafu Ye
  • , Qing Li
  • , Lili Zhang
  • , Xun Ge
  • , Yan Ye
  • , Yuchen Lei
  • , Wei Jiang
  • , Zhigao Hu
  • , Feng Wu
  • , Xiaohao Zhou
  • , Jinshui Miao
  • Jianlu Wang, Hugen Yan, Chongxin Shan, Jiangnan Dai, Changqing Chen, Xiaoshuang Chen, Wei Lu, Weida Hu

Research output: Contribution to journalArticlepeer-review

139 Scopus citations

Abstract

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W-1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W-1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition-grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

Original languageEnglish
JournalScience Advances
Volume7
Issue number16
DOIs
StatePublished - 1 Apr 2021

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