BiFET low noise amplifier for dual band RF receiver

This work describes an RF low noise amplifier (LNA) with a BiFET configuration, which merges the advantages of the low noise of the bipolar devices with the high linearity of the MOS devices together by the BiMOS process. By using the optimum architecture to the cascode topology, this configuration can obviously improve the LNA's performance and can operate at two different frequencies. The low current (1.7 mA) and low power (5.7 mW) consumption is achieved with a low noise figure (1.69 dB), a 15.9 dB voltage gain, -8.5 dB_m IIP3 and -67 dB reverse isolation operating in ISM band. The BiFET LNA which targets in the AMS BiCMOS 0.8 μm, mixed-signal process has been optimized for a low power RF receiver used in the general domestic and industrial remote control including keyless entry.