Beating patterns in the oscillatory magnetoresistance of an AlGaN/GaN heterostructure

Z. J. Qiu; Y. S. Gui; Z. W. Zheng; N. Tang; J. Lu; B. Shen; N. Dai; J. H. Chu

doi:10.1016/j.ssc.2003.09.031

Beating patterns in the oscillatory magnetoresistance of an AlGaN/GaN heterostructure

Z. J. Qiu^*
, Y. S. Gui
, Z. W. Zheng
, N. Tang
, J. Lu
, B. Shen
, N. Dai
, J. H. Chu

^*Corresponding author for this work

CAS - Shanghai Institute of Technical Physics
Nanjing University

Research output: Contribution to journal › Article › peer-review

Abstract

Magneto-transport measurements have been carried out on a modulation-doped Al_0.22Ga_0.78N/GaN heterostructure in a temperature range between 1.5 and 25 K with a rather high carrier density, 1.1 × 10 ¹³cm^-2. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a special temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.

Original language	English
Pages (from-to)	187-190
Number of pages	4
Journal	Solid State Communications
Volume	129
Issue number	3
DOIs	https://doi.org/10.1016/j.ssc.2003.09.031
State	Published - Jan 2004
Externally published	Yes

Keywords

A. Heterostructure
D. Magnetoresistance
D. Two-dimensional electron gas

Access to Document

10.1016/j.ssc.2003.09.031

Cite this

@article{46a1d556b9304196bec194e797944bbe,

title = "Beating patterns in the oscillatory magnetoresistance of an AlGaN/GaN heterostructure",

abstract = "Magneto-transport measurements have been carried out on a modulation-doped Al0.22Ga0.78N/GaN heterostructure in a temperature range between 1.5 and 25 K with a rather high carrier density, 1.1 × 10 13cm-2. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a special temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.",

keywords = "A. Heterostructure, D. Magnetoresistance, D. Two-dimensional electron gas",

author = "Qiu, \{Z. J.\} and Gui, \{Y. S.\} and Zheng, \{Z. W.\} and N. Tang and J. Lu and B. Shen and N. Dai and Chu, \{J. H.\}",

year = "2004",

month = jan,

doi = "10.1016/j.ssc.2003.09.031",

language = "英语",

volume = "129",

pages = "187--190",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "3",

}

TY - JOUR

T1 - Beating patterns in the oscillatory magnetoresistance of an AlGaN/GaN heterostructure

AU - Qiu, Z. J.

AU - Gui, Y. S.

AU - Zheng, Z. W.

AU - Tang, N.

AU - Lu, J.

AU - Shen, B.

AU - Dai, N.

AU - Chu, J. H.

PY - 2004/1

Y1 - 2004/1

N2 - Magneto-transport measurements have been carried out on a modulation-doped Al0.22Ga0.78N/GaN heterostructure in a temperature range between 1.5 and 25 K with a rather high carrier density, 1.1 × 10 13cm-2. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a special temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.

AB - Magneto-transport measurements have been carried out on a modulation-doped Al0.22Ga0.78N/GaN heterostructure in a temperature range between 1.5 and 25 K with a rather high carrier density, 1.1 × 10 13cm-2. Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a special temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.

KW - A. Heterostructure

KW - D. Magnetoresistance

KW - D. Two-dimensional electron gas

UR - https://www.scopus.com/pages/publications/0344063379

U2 - 10.1016/j.ssc.2003.09.031

DO - 10.1016/j.ssc.2003.09.031

M3 - 文章

AN - SCOPUS:0344063379

SN - 0038-1098

VL - 129

SP - 187

EP - 190

JO - Solid State Communications

JF - Solid State Communications

IS - 3

ER -

Beating patterns in the oscillatory magnetoresistance of an AlGaN/GaN heterostructure

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this