Backside-illuminated infrared photoluminescence and photoreflectance: Probe of vertical nonuniformity of HgCdTe on GaAs

Jun Shao; Lu Chen; Wei Lu; Xiang Lü; Liangqing Zhu; Shaoling Guo; Li He; Junhao Chu

doi:10.1063/1.3373595

Backside-illuminated infrared photoluminescence and photoreflectance: Probe of vertical nonuniformity of HgCdTe on GaAs

Jun Shao^*
, Lu Chen
, Wei Lu
, Xiang Lü
, Liangqing Zhu
, Shaoling Guo
, Li He
, Junhao Chu

^*Corresponding author for this work

School of Physics and Electronic Science

CAS - Shanghai Institute of Technical Physics

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

Vertical uniformity of HgCdTe epilayer is a crucial parameter for infrared detector engineering. In this work, backside illuminated infrared photoluminescence (PL) and photoreflectance (PR) measurements are carried out on an arsenic-doped Hg1-x Cdx Te layer molecular-beam epitaxially grown on GaAs substrate, and the alloy composition and impurity states of the HgCdTe near the substrate are evaluated. By comparing to frontside illuminated PL and PR data, the vertical nonuniformity of composition and impurity states are evidenced. The results indicate that backside illuminated PL and PR are good pathway for evaluating contactlessly the nonuniformity of alloy composition and impurity states along the growth direction.

Original language	English
Article number	121915
Journal	Applied Physics Letters
Volume	96
Issue number	12
DOIs	https://doi.org/10.1063/1.3373595
State	Published - 2010

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title = "Backside-illuminated infrared photoluminescence and photoreflectance: Probe of vertical nonuniformity of HgCdTe on GaAs",

abstract = "Vertical uniformity of HgCdTe epilayer is a crucial parameter for infrared detector engineering. In this work, backside illuminated infrared photoluminescence (PL) and photoreflectance (PR) measurements are carried out on an arsenic-doped Hg1-x Cdx Te layer molecular-beam epitaxially grown on GaAs substrate, and the alloy composition and impurity states of the HgCdTe near the substrate are evaluated. By comparing to frontside illuminated PL and PR data, the vertical nonuniformity of composition and impurity states are evidenced. The results indicate that backside illuminated PL and PR are good pathway for evaluating contactlessly the nonuniformity of alloy composition and impurity states along the growth direction.",

author = "Jun Shao and Lu Chen and Wei Lu and Xiang L{\"u} and Liangqing Zhu and Shaoling Guo and Li He and Junhao Chu",

year = "2010",

doi = "10.1063/1.3373595",

language = "英语",

volume = "96",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Backside-illuminated infrared photoluminescence and photoreflectance

T2 - Probe of vertical nonuniformity of HgCdTe on GaAs

AU - Shao, Jun

AU - Chen, Lu

AU - Lu, Wei

AU - Lü, Xiang

AU - Zhu, Liangqing

AU - Guo, Shaoling

AU - He, Li

AU - Chu, Junhao

PY - 2010

Y1 - 2010

N2 - Vertical uniformity of HgCdTe epilayer is a crucial parameter for infrared detector engineering. In this work, backside illuminated infrared photoluminescence (PL) and photoreflectance (PR) measurements are carried out on an arsenic-doped Hg1-x Cdx Te layer molecular-beam epitaxially grown on GaAs substrate, and the alloy composition and impurity states of the HgCdTe near the substrate are evaluated. By comparing to frontside illuminated PL and PR data, the vertical nonuniformity of composition and impurity states are evidenced. The results indicate that backside illuminated PL and PR are good pathway for evaluating contactlessly the nonuniformity of alloy composition and impurity states along the growth direction.

AB - Vertical uniformity of HgCdTe epilayer is a crucial parameter for infrared detector engineering. In this work, backside illuminated infrared photoluminescence (PL) and photoreflectance (PR) measurements are carried out on an arsenic-doped Hg1-x Cdx Te layer molecular-beam epitaxially grown on GaAs substrate, and the alloy composition and impurity states of the HgCdTe near the substrate are evaluated. By comparing to frontside illuminated PL and PR data, the vertical nonuniformity of composition and impurity states are evidenced. The results indicate that backside illuminated PL and PR are good pathway for evaluating contactlessly the nonuniformity of alloy composition and impurity states along the growth direction.

UR - https://www.scopus.com/pages/publications/77950326032

U2 - 10.1063/1.3373595

DO - 10.1063/1.3373595

M3 - 文章

AN - SCOPUS:77950326032

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 121915

ER -

Backside-illuminated infrared photoluminescence and photoreflectance: Probe of vertical nonuniformity of HgCdTe on GaAs

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