Atomically Thin ITO Transistor Matrix for Monolithic Integration of Ultrabright Micro-LED Displays

The realization of ultrabright Micro-LED displays critically depends on the ability of backplane driving circuits to deliver high current densities to each pixel. Here, we report a high-performance transistor technology based on ultrathin indium tin oxide (ITO), which offers superior electrical properties compared to conventional TFT backplane. To address the challenge of high carrier concentration in ITO─typically manifesting as a degenerate semiconductor─we introduce a controllable in situ oxidation and thickness regulation process to modulate the doping concentration. The optimized ITO TFT backplanes are monolithically integrated with Micro-LED chips at the wafer level, contributing 8.4% of the total power consumption for the integrated microdisplay. Luminance values of 3.7 × 10⁶ nits for blue and 1.6 × 10⁷ nits for green emission are also achieved, meeting the demands of high-brightness applications. This work presents a new strategy for high-current-density Micro-LED driving and provides a practical pathway toward scalable, ultrabright microdisplay technologies.