@inproceedings{aa0c3e9d680a4512b5ffd97ed48f848e,
title = "Atomic visualization of the emergence of orthorhombic phase in Hf0.5Zr0.5O2ferroelectric film with in-situ rapid thermal annealing",
abstract = "For the first time, the dynamic process of orthorhombic (o-) phase emergence during rapid thermal annealing in polycrystalline Hf0.5Zr0.5O2 (HZO) ferroelectric film was directly visualized though in-situ spherical aberration corrected transmission electron microscopy technique. We have the following main observations: (1) o-phase nucleates from centrosymmetric tetragonal (t-) phase at top TiN/HZO interface where the oxygen vacancy (Vo) concentration is rich, identifying that Vo is helpful to lower the free energy of o-phase; (2) o-phase appears in both heating up and cooling down stages. The o-phase formed in the heating stage rapidly transforms into t-phase again as the temperature further increasing, and the one formed in the cooling stage is retained. These findings provide solid evidence on the o-phase origin in fluorite-type ferroelectric materials.",
keywords = "HZO film, RTA, ferroelectric, in-situ TEM",
author = "Tianjiao Xin and Yonghui Zheng and Yan Cheng and Kai Du and Yiwei Wang and Zhaomeng Gao and Diqing Su and Yunzhe Zheng and Qilan Zhong and Cheng Liu and Rong Huang and Chungang Duan and Sannian Song and Zhitang Song and Hangbing Lyu",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022 ; Conference date: 12-06-2022 Through 17-06-2022",
year = "2022",
doi = "10.1109/VLSITechnologyandCir46769.2022.9830185",
language = "英语",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "343--344",
booktitle = "2022 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2022",
address = "美国",
}