Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2films: Vacancy generation and lattice dislocation

Yunzhe Zheng; Yonghui Zheng; Zhaomeng Gao; Jun Hui Yuan; Yan Cheng; Qilan Zhong; Tianjiao Xin; Yiwei Wang; Cheng Liu; Yaru Huang; Rong Huang; Xiangshui Miao; Kan Hao Xue; Hangbing Lyu

doi:10.1109/IEDM19574.2021.9720565

Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf_0.5Zr_0.5O₂films: Vacancy generation and lattice dislocation

Yunzhe Zheng, Yonghui Zheng, Zhaomeng Gao, Jun Hui Yuan, Yan Cheng, Qilan Zhong, Tianjiao Xin, Yiwei Wang, Cheng Liu, Yaru Huang, Rong Huang, Xiangshui Miao, Kan Hao Xue, Hangbing Lyu

School of Physics and Electronic Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

36 Scopus citations

Abstract

For the first time, we directly observed the lattice dislocation and monoclinic (m-) phase formation in ferroelectric Hf0.5Zr0.5O2 (HZO) films during fatigue, through the spherical aberration (Cs)-corrected transmission electron microscopy (TEM) technique. The main observations are: 1. More oxygen vacancies (Vo) tend to be generated when the orthorhombic (o-) phase polar axis is close to the out-of-plane direction (parallel to the electrical field); 2. The o-phase with large grain size tends to fragment with lattice dislocation and m-phase formation by martensitic-like transformation; 3. At the interface of m-/o-structure, the Vo formation energies are lowered. This work provides fundamental understanding on the defect generation mechanism of HZO film at the atomic-level, laying a solid foundation to further optimization and commercialization of the ferroelectric HZO devices.

Original language	English
Title of host publication	2021 IEEE International Electron Devices Meeting, IEDM 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	33.5.1-33.5.4
ISBN (Electronic)	9781665425728
DOIs	https://doi.org/10.1109/IEDM19574.2021.9720565
State	Published - 2021
Event	2021 IEEE International Electron Devices Meeting, IEDM 2021 - San Francisco, United States Duration: 11 Dec 2021 → 16 Dec 2021

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2021-December
ISSN (Print)	0163-1918

Conference

Conference	2021 IEEE International Electron Devices Meeting, IEDM 2021
Country/Territory	United States
City	San Francisco
Period	11/12/21 → 16/12/21

Access to Document

10.1109/IEDM19574.2021.9720565

Cite this

Zheng, Y., Zheng, Y., Gao, Z., Yuan, J. H., Cheng, Y., Zhong, Q., Xin, T., Wang, Y., Liu, C., Huang, Y., Huang, R., Miao, X., Xue, K. H., & Lyu, H. (2021). Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf_0.5Zr_0.5O₂films: Vacancy generation and lattice dislocation. In 2021 IEEE International Electron Devices Meeting, IEDM 2021 (pp. 33.5.1-33.5.4). (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2021-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM19574.2021.9720565

Zheng, Yunzhe ; Zheng, Yonghui ; Gao, Zhaomeng et al. / Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf_0.5Zr_0.5O₂films : Vacancy generation and lattice dislocation. 2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 33.5.1-33.5.4 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{40928f60cdf44eb48043f6b4f1d1a767,

title = "Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2films: Vacancy generation and lattice dislocation",

abstract = "For the first time, we directly observed the lattice dislocation and monoclinic (m-) phase formation in ferroelectric Hf0.5Zr0.5O2 (HZO) films during fatigue, through the spherical aberration (Cs)-corrected transmission electron microscopy (TEM) technique. The main observations are: 1. More oxygen vacancies (Vo) tend to be generated when the orthorhombic (o-) phase polar axis is close to the out-of-plane direction (parallel to the electrical field); 2. The o-phase with large grain size tends to fragment with lattice dislocation and m-phase formation by martensitic-like transformation; 3. At the interface of m-/o-structure, the Vo formation energies are lowered. This work provides fundamental understanding on the defect generation mechanism of HZO film at the atomic-level, laying a solid foundation to further optimization and commercialization of the ferroelectric HZO devices.",

author = "Yunzhe Zheng and Yonghui Zheng and Zhaomeng Gao and Yuan, \{Jun Hui\} and Yan Cheng and Qilan Zhong and Tianjiao Xin and Yiwei Wang and Cheng Liu and Yaru Huang and Rong Huang and Xiangshui Miao and Xue, \{Kan Hao\} and Hangbing Lyu",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Electron Devices Meeting, IEDM 2021 ; Conference date: 11-12-2021 Through 16-12-2021",

year = "2021",

doi = "10.1109/IEDM19574.2021.9720565",

language = "英语",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "33.5.1--33.5.4",

booktitle = "2021 IEEE International Electron Devices Meeting, IEDM 2021",

address = "美国",

}

Zheng, Y, Zheng, Y, Gao, Z, Yuan, JH, Cheng, Y, Zhong, Q, Xin, T, Wang, Y, Liu, C, Huang, Y, Huang, R, Miao, X, Xue, KH & Lyu, H 2021, Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf_0.5Zr_0.5O₂films: Vacancy generation and lattice dislocation. in 2021 IEEE International Electron Devices Meeting, IEDM 2021. Technical Digest - International Electron Devices Meeting, IEDM, vol. 2021-December, Institute of Electrical and Electronics Engineers Inc., pp. 33.5.1-33.5.4, 2021 IEEE International Electron Devices Meeting, IEDM 2021, San Francisco, United States, 11/12/21. https://doi.org/10.1109/IEDM19574.2021.9720565

Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf_0.5Zr_0.5O₂films: Vacancy generation and lattice dislocation. / Zheng, Yunzhe; Zheng, Yonghui; Gao, Zhaomeng et al.
2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc., 2021. p. 33.5.1-33.5.4 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2021-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2films

T2 - 2021 IEEE International Electron Devices Meeting, IEDM 2021

AU - Zheng, Yunzhe

AU - Zheng, Yonghui

AU - Gao, Zhaomeng

AU - Yuan, Jun Hui

AU - Cheng, Yan

AU - Zhong, Qilan

AU - Xin, Tianjiao

AU - Wang, Yiwei

AU - Liu, Cheng

AU - Huang, Yaru

AU - Huang, Rong

AU - Miao, Xiangshui

AU - Xue, Kan Hao

AU - Lyu, Hangbing

PY - 2021

Y1 - 2021

N2 - For the first time, we directly observed the lattice dislocation and monoclinic (m-) phase formation in ferroelectric Hf0.5Zr0.5O2 (HZO) films during fatigue, through the spherical aberration (Cs)-corrected transmission electron microscopy (TEM) technique. The main observations are: 1. More oxygen vacancies (Vo) tend to be generated when the orthorhombic (o-) phase polar axis is close to the out-of-plane direction (parallel to the electrical field); 2. The o-phase with large grain size tends to fragment with lattice dislocation and m-phase formation by martensitic-like transformation; 3. At the interface of m-/o-structure, the Vo formation energies are lowered. This work provides fundamental understanding on the defect generation mechanism of HZO film at the atomic-level, laying a solid foundation to further optimization and commercialization of the ferroelectric HZO devices.

AB - For the first time, we directly observed the lattice dislocation and monoclinic (m-) phase formation in ferroelectric Hf0.5Zr0.5O2 (HZO) films during fatigue, through the spherical aberration (Cs)-corrected transmission electron microscopy (TEM) technique. The main observations are: 1. More oxygen vacancies (Vo) tend to be generated when the orthorhombic (o-) phase polar axis is close to the out-of-plane direction (parallel to the electrical field); 2. The o-phase with large grain size tends to fragment with lattice dislocation and m-phase formation by martensitic-like transformation; 3. At the interface of m-/o-structure, the Vo formation energies are lowered. This work provides fundamental understanding on the defect generation mechanism of HZO film at the atomic-level, laying a solid foundation to further optimization and commercialization of the ferroelectric HZO devices.

UR - https://www.scopus.com/pages/publications/85126953144

U2 - 10.1109/IEDM19574.2021.9720565

DO - 10.1109/IEDM19574.2021.9720565

M3 - 会议稿件

AN - SCOPUS:85126953144

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 33.5.1-33.5.4

BT - 2021 IEEE International Electron Devices Meeting, IEDM 2021

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 11 December 2021 through 16 December 2021

ER -

Zheng Y, Zheng Y, Gao Z, Yuan JH, Cheng Y, Zhong Q et al. Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf_0.5Zr_0.5O₂films: Vacancy generation and lattice dislocation. In 2021 IEEE International Electron Devices Meeting, IEDM 2021. Institute of Electrical and Electronics Engineers Inc. 2021. p. 33.5.1-33.5.4. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM19574.2021.9720565