Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory

Chanyoung Yoo; Jeong Woo Jeon; Seungjae Yoon; Yan Cheng; Gyuseung Han; Wonho Choi; Byongwoo Park; Gwangsik Jeon; Sangmin Jeon; Woohyun Kim; Yonghui Zheng; Jongho Lee; Junku Ahn; Sunglae Cho; Scott B. Clendenning; Ilya V. Karpov; Yoon Kyung Lee; Jung Hae Choi; Cheol Seong Hwang

doi:10.1002/adma.202207143

Atomic Layer Deposition of Sb₂Te₃/GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory

Chanyoung Yoo, Jeong Woo Jeon, Seungjae Yoon, Yan Cheng, Gyuseung Han, Wonho Choi, Byongwoo Park, Gwangsik Jeon, Sangmin Jeon, Woohyun Kim, Yonghui Zheng, Jongho Lee, Junku Ahn, Sunglae Cho, Scott B. Clendenning, Ilya V. Karpov, Yoon Kyung Lee, Jung Hae Choi, Cheol Seong Hwang

School of Physics and Electronic Science

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Atomic layer deposition (ALD) of Sb₂Te₃/GeTe superlattice (SL) film on planar and vertical sidewall areas containing TiN metal and SiO₂ insulator is demonstrated. The peculiar chemical affinity of the ALD precursor to the substrate surface and the 2D nature of the Sb₂Te₃ enable the growth of an in situ crystallized SL film with a preferred orientation. The SL film shows a reduced reset current of ≈1/7 of the randomly oriented Ge₂Sb₂Te₅ alloy. The reset switching is induced by the transition from the SL to the (111)-oriented face-centered-cubic (FCC) Ge₂Sb₂Te₅ alloy and subsequent melt-quenching-free amorphization. The in-plane compressive stress, induced by the SL-to-FCC structural transition, enhances the electromigration of Ge along the [111] direction of FCC structure, which enables such a significant improvement. Set operation switches the amorphous to the (111)-oriented FCC structure.

Original language	English
Article number	2207143
Journal	Advanced Materials
Volume	34
Issue number	50
DOIs	https://doi.org/10.1002/adma.202207143
State	Published - 15 Dec 2022

Keywords

Sb Te /GeTe superlattice
atomic layer deposition
oriented growth
phase-change memory
switching current density
switching mechanisms
vertical devices

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10.1002/adma.202207143

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Yoo, C., Jeon, J. W., Yoon, S., Cheng, Y., Han, G., Choi, W., Park, B., Jeon, G., Jeon, S., Kim, W., Zheng, Y., Lee, J., Ahn, J., Cho, S., Clendenning, S. B., Karpov, I. V., Lee, Y. K., Choi, J. H., & Hwang, C. S. (2022). Atomic Layer Deposition of Sb₂Te₃/GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory. Advanced Materials, 34(50), Article 2207143. https://doi.org/10.1002/adma.202207143

@article{0a668226efe44e848848dec970be64cb,

title = "Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory",

abstract = "Atomic layer deposition (ALD) of Sb2Te3/GeTe superlattice (SL) film on planar and vertical sidewall areas containing TiN metal and SiO2 insulator is demonstrated. The peculiar chemical affinity of the ALD precursor to the substrate surface and the 2D nature of the Sb2Te3 enable the growth of an in situ crystallized SL film with a preferred orientation. The SL film shows a reduced reset current of ≈1/7 of the randomly oriented Ge2Sb2Te5 alloy. The reset switching is induced by the transition from the SL to the (111)-oriented face-centered-cubic (FCC) Ge2Sb2Te5 alloy and subsequent melt-quenching-free amorphization. The in-plane compressive stress, induced by the SL-to-FCC structural transition, enhances the electromigration of Ge along the [111] direction of FCC structure, which enables such a significant improvement. Set operation switches the amorphous to the (111)-oriented FCC structure.",

keywords = "Sb Te /GeTe superlattice, atomic layer deposition, oriented growth, phase-change memory, switching current density, switching mechanisms, vertical devices",

author = "Chanyoung Yoo and Jeon, \{Jeong Woo\} and Seungjae Yoon and Yan Cheng and Gyuseung Han and Wonho Choi and Byongwoo Park and Gwangsik Jeon and Sangmin Jeon and Woohyun Kim and Yonghui Zheng and Jongho Lee and Junku Ahn and Sunglae Cho and Clendenning, \{Scott B.\} and Karpov, \{Ilya V.\} and Lee, \{Yoon Kyung\} and Choi, \{Jung Hae\} and Hwang, \{Cheol Seong\}",

note = "Publisher Copyright: {\textcopyright} 2022 Wiley-VCH GmbH.",

year = "2022",

month = dec,

day = "15",

doi = "10.1002/adma.202207143",

language = "英语",

volume = "34",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "50",

}

Yoo, C, Jeon, JW, Yoon, S, Cheng, Y, Han, G, Choi, W, Park, B, Jeon, G, Jeon, S, Kim, W, Zheng, Y, Lee, J, Ahn, J, Cho, S, Clendenning, SB, Karpov, IV, Lee, YK, Choi, JH & Hwang, CS 2022, 'Atomic Layer Deposition of Sb₂Te₃/GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory', Advanced Materials, vol. 34, no. 50, 2207143. https://doi.org/10.1002/adma.202207143

TY - JOUR

T1 - Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory

AU - Yoo, Chanyoung

AU - Jeon, Jeong Woo

AU - Yoon, Seungjae

AU - Cheng, Yan

AU - Han, Gyuseung

AU - Choi, Wonho

AU - Park, Byongwoo

AU - Jeon, Gwangsik

AU - Jeon, Sangmin

AU - Kim, Woohyun

AU - Zheng, Yonghui

AU - Lee, Jongho

AU - Ahn, Junku

AU - Cho, Sunglae

AU - Clendenning, Scott B.

AU - Karpov, Ilya V.

AU - Lee, Yoon Kyung

AU - Choi, Jung Hae

AU - Hwang, Cheol Seong

PY - 2022/12/15

Y1 - 2022/12/15

N2 - Atomic layer deposition (ALD) of Sb2Te3/GeTe superlattice (SL) film on planar and vertical sidewall areas containing TiN metal and SiO2 insulator is demonstrated. The peculiar chemical affinity of the ALD precursor to the substrate surface and the 2D nature of the Sb2Te3 enable the growth of an in situ crystallized SL film with a preferred orientation. The SL film shows a reduced reset current of ≈1/7 of the randomly oriented Ge2Sb2Te5 alloy. The reset switching is induced by the transition from the SL to the (111)-oriented face-centered-cubic (FCC) Ge2Sb2Te5 alloy and subsequent melt-quenching-free amorphization. The in-plane compressive stress, induced by the SL-to-FCC structural transition, enhances the electromigration of Ge along the [111] direction of FCC structure, which enables such a significant improvement. Set operation switches the amorphous to the (111)-oriented FCC structure.

AB - Atomic layer deposition (ALD) of Sb2Te3/GeTe superlattice (SL) film on planar and vertical sidewall areas containing TiN metal and SiO2 insulator is demonstrated. The peculiar chemical affinity of the ALD precursor to the substrate surface and the 2D nature of the Sb2Te3 enable the growth of an in situ crystallized SL film with a preferred orientation. The SL film shows a reduced reset current of ≈1/7 of the randomly oriented Ge2Sb2Te5 alloy. The reset switching is induced by the transition from the SL to the (111)-oriented face-centered-cubic (FCC) Ge2Sb2Te5 alloy and subsequent melt-quenching-free amorphization. The in-plane compressive stress, induced by the SL-to-FCC structural transition, enhances the electromigration of Ge along the [111] direction of FCC structure, which enables such a significant improvement. Set operation switches the amorphous to the (111)-oriented FCC structure.

KW - Sb Te /GeTe superlattice

KW - atomic layer deposition

KW - oriented growth

KW - phase-change memory

KW - switching current density

KW - switching mechanisms

KW - vertical devices

UR - https://www.scopus.com/pages/publications/85141381135

U2 - 10.1002/adma.202207143

DO - 10.1002/adma.202207143

M3 - 文章

C2 - 36271720

AN - SCOPUS:85141381135

SN - 0935-9648

VL - 34

JO - Advanced Materials

JF - Advanced Materials

IS - 50

M1 - 2207143

ER -

Atomic Layer Deposition of Sb₂Te₃/GeTe Superlattice Film and Its Melt-Quenching-Free Phase-Transition Mechanism for Phase-Change Memory

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Keywords

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