Abstract
A silicon polarizing beam splitter is designed and fabricated based on an asymmetric slot waveguide structure without adopting additional strip-slot waveguide mode converters. The asymmetric slot waveguide consists of a 150-nm-wide and a 350-nm-wide nanowires with a slot of 100 nm, which can realize a transverse magnetic light cross-coupling with a 392-nm-wide strip waveguide, while little transverse electric light coupling can happen. The fabricated device has a coupling length of ∼ 18 μm with a coupling gap spacing of 450 nm, which can achieve a polarization extinction ratio (PER) of ∼ 14 and 25 dB at the bar and cross ports, respectively. Low insertion loss is realized, while more than 10-dB PER can be obtained over the wavelength range of 1520-1576 nm. The device performance could be further improved with the fine optimization of device structure parameters and fabrication process.
| Original language | English |
|---|---|
| Article number | 7445157 |
| Pages (from-to) | 1294-1297 |
| Number of pages | 4 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 28 |
| Issue number | 12 |
| DOIs | |
| State | Published - 15 Jun 2016 |
| Externally published | Yes |
Keywords
- Polarizing beam splitter
- integrated optics
- siliconon-insulator
- slot waveguide