TY - JOUR
T1 - Asymmetric SiC trench MOSFET with N-base super barrier rectifier embedded for switching characteristic optimization
AU - Sun, Jing
AU - Deng, Zhengxun
AU - Li, Hang
AU - Qian, Wensheng
AU - Yang, Jiye
AU - Sun, Yabin
AU - Shi, Yanling
AU - Li, Xiaojin
N1 - Publisher Copyright:
Copyright © 2025 The Institute of Electronics, Information and Communication Engineers. This work is licensed under a Creative Commons Attribution NonCommercial, No Derivatives 4.0 License.
PY - 2025
Y1 - 2025
N2 - To suppress the turn-on of the parasitic body diode in SiC MOSFET, researchers have proposed various solutions. Among them, in this paper, a novel asymmetric SiC trench MOSFET with embedded N-base super barrier rectifier (ATN-SBR-MOS) is proposed and investigated. Benefiting from the lower threshold voltage of the SBR, the turn-on voltage (VF) is reduced by 63%, thus the bipolar degradation issue is effectively eliminated. Moreover, the gate charge (QG) and reverse recovery charge (QRR) are shrunk by 59% and 36% respectively. Both of the switching characteristic are effectively improved,demonstrating significant potential for implementation in power device applications.
AB - To suppress the turn-on of the parasitic body diode in SiC MOSFET, researchers have proposed various solutions. Among them, in this paper, a novel asymmetric SiC trench MOSFET with embedded N-base super barrier rectifier (ATN-SBR-MOS) is proposed and investigated. Benefiting from the lower threshold voltage of the SBR, the turn-on voltage (VF) is reduced by 63%, thus the bipolar degradation issue is effectively eliminated. Moreover, the gate charge (QG) and reverse recovery charge (QRR) are shrunk by 59% and 36% respectively. Both of the switching characteristic are effectively improved,demonstrating significant potential for implementation in power device applications.
KW - Power devices and circuits
KW - asymmetric SiC trench MOSFET
KW - bipolar degradation
KW - super barrier rectifier
KW - switching characteristic
UR - https://www.scopus.com/pages/publications/105025946981
U2 - 10.1587/elex.22.20250531
DO - 10.1587/elex.22.20250531
M3 - 快报
AN - SCOPUS:105025946981
SN - 1349-2543
VL - 22
JO - IEICE Electronics Express
JF - IEICE Electronics Express
IS - 24
ER -