@inproceedings{dada7d08b1c640ddb02ce56598a2c8ac,
title = "Arsenic-doped narrow-gap HgCdTe epilayers studied by infrared modulation spectroscopy",
abstract = "We outline experimental data recently established in our study of in-situ arsenic (As) doped narrow-gap Hg1-xCdxTe films by infrared modulation spectroscopy. After a brief introduction of the step-scan Fourier transform infrared spectrometer-based modulation spectroscopic techniques, impurity levels and photomodulation mechanisms in As-doped HgCdTe epilayers are surveyed based on infrared modulation spectroscopic data, and the possibility of identifying cutoff wavelength and vertical uniformity of HgCdTe epilayers is indicated. The results illustrate that the infrared modulation spectroscopy will play an important role in optical characterization of narrow-gap semiconductors.",
keywords = "HgCdTe, Infrared modulation spectroscopy, P-type doping, Photoluminescence, Photoreflectance",
author = "Jun Shao and Wei Lu and Lu Chen and Xiang Lu and Shaoling Guo and Junhao Chu and Li He",
year = "2011",
doi = "10.1117/12.888532",
language = "英语",
isbn = "9780819485687",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Seventh International Conference on Thin Film Physics and Applications",
note = "7th International Conference on Thin Film Physics and Applications ; Conference date: 24-09-2010 Through 27-09-2010",
}